Samsung Electronics Co., Ltd., the world leader in memory technology, today announced that it is mass producing the industry’s most ...
Seoul, Korea on Oct. 22. 2014
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory for use in solid state drives (SSDs). “With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs," said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. "The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business." The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 1...
Seoul, Korea on Oct. 9. 2014