skip to contents

skip to footer

Exynos

Samsung Semiconductor Exynos

Samsung Semiconductor At the core of

Samsung Semiconductor mobile performance

Samsung Semiconductor Exynos Learn more

Smart Memory

Samsung Semiconductor Smart Memory

Samsung Semiconductor More Mobility

Samsung Semiconductor Less Energy

Samsung Semiconductor Smart Memory Learn more

Samsung Memory link

Samsung Semiconductor Mobile link for mobile

Samsung Semiconductor Easily support for

Samsung Semiconductor perfect mobile

Samsung Semiconductor Mobile link for mobile Learn more

  • Samsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory
  • Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory for use in solid state drives (SSDs). “With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs," said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. "The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business." The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 1...
    Seoul, Korea on Oct. 9. 2014