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  • Samsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory
  • Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory for use in solid state drives (SSDs). “With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs," said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. "The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business." The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 1...
    Seoul, Korea on Oct. 9. 2014
  • Samsung Electronics' New NFC Chip with Embedded Flash Offers Increased RF Performance in a Small Package
  • Samsung Electronics Co., Ltd., a world leader in advanced semiconductor solutions, today introduced its new near field communication (NFC) chip, the S3FWRN5, which features high radio frequency (RF) performance and small package size. The S3FWRN5's RF performance doubles the range in both reader and card emulation modes, when compared to that of its predecessor, the S3FNRN3. "With each new generation of mobile devices, including smartphones, designers are challenged to develop products that provide greater convenience to users and keep them more connected," said Dr. Kyushik Hong, Vice President of Marketing, System LSI Business, Samsung Electronics. "To assist with those parameters, Samsung will continue to offer advanced NFC technology solutions to those tasked with developing exciting, next-generation mobile devices." With a mere package size of 2.4mm x...
    Seoul, Korea on Oct. 8. 2014