go contents

samsung

This content requires the latest Adobe Flash player.
semiconductor global/English

About Us

  • Business Profile
  • Philosophy & Vision
  • History
  • Locations
  • News
    • Press Releases
    • Press Contacts
  • Print ADs
  • Events Schedule
  • Eco SAMSUNG

Financial Highlights
DDR3 Microsite
Eco product
events
home > About Us > History

History

2009
Jun Samsung introduces new 45nm application processor for personal navigation devices
May Samsung and SanDisk renew patent cross licensing and flash supply agreements
May Launches 32-gigabyte embedded memory card produced with 3nm-clas NAND technology
Apr IBM Technology Alliance announces availability of advanced 28nm, low-power semiconductor technology
Mar Ships world's first and smallest high-density memory modules based on 2-gigabit (Gb), 50 nm-class DDR3
Mar Announces use of 40nm process technology to produce eight-gigabit (Gb) Flex-OneNAND™ fusion memory chip
Feb Announces development and Intel validation of industry’s first 40nm class DRAM chip and module
Feb SAMSUNG forms foundry partnership to manufacture advanced programmable logic Chips for Xilinx
Jan Developing world's highest density, four gigabit (Gb) DDR3 DRAM chip, using 50nm process technology

  • www.samsung.com
  • privacy
  • legal
  • sitemap
  • contact us
Copyright© 1995-2009 SAMSUNG. All rights reserved.
USA (Sales) / English Korea / Korean Europe / English Europe / German Europe / Polish Europe / Russian Europe / Arabic Europe / Spanish Europe / Italian
close
external site is opening in the :

open cancel