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Green Memory in the News

Samsung unveils its first 3D V-NAND SSDs for the enterprise

Aug. 14. 2013
Designed only for data centres and enterprise servers


Samsung has unveiled what it claims is the first solid state drive (SSD) based on its recently unveiled 3D V-NAND technology.

Announced during the Flash Memory Summit 2013 in California on Tuesday, Samsung said its new SSD - which has been in production since "earlier this month" - is designed for use in enterprise servers and data centres, so don't expect it in any end devices soon.

It was only last week that Samsung revealed it had began mass production of 3D vertical NAND or "V-NAND" chips after 10 years of research and development.

The technology is different to more traditional modes of manufacture as it enables memory cells to be stacked on top of each other vertically on the same chip, instead of spread out in a two dimensional (2D) horizontal grid.

Other memroy firms, such as Micron, have also said they are working on similar "3D" chip technology.

"By applying our 3D V-NAND, [we are] providing customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption," Samsung's executive VP of semiconductor R&D, E.S. Jung said in a keynote.

The Korean firm's V-NAND SSD will arrive in 480GB and 960GB versions, with the latter promising more than a 20 percent increase in sequential and random write speeds. Samsung said this achieved by utilising 64 dies of MLC 3D V-NAND flash, each offering 128Gb of storage, with a six-gigabit-per-second SATA interface controller.

The V-NAND SSD also offers 35K program erase cycles and is available in a 2.5 inch form factor with X, Y and Z heights of 10cm, 7cm and 7mm, which Samsung claims provides server manufacturers with "more design flexibility and scalability".

"[Our] proprietary 3D V-NAND technology achieves manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by using cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array," Jung explained.

Samsung said the release is part of its aim to introduce "differentiated green memory products and solutions for the server, mobile and PC markets", which it hopes will help to reduce energy waste.

The firm also believes that the development of this 3D NAND technology will innovate and thus drive growth in the memory market.

Samsung's 3D NAND SSDs will focus on more efficient large data to higher density PC applications. more

Source: The Inquirer