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Green Memory in the News

Samsung's 128Gb 3D NAND Endures 35,000 Cycles as Enterprise SSD

Feb. 18. 2014
Samsung's 128Gb 3D NAND Endures 35,000 Cycles as Enterprise SSD  
Samsung Electronics Co Ltd made an announcement about its "Vertical NAND (V-NAND)" 3D NAND flash memory at International Solid-State Circuits Conference (ISSCC) 2014 (lecture number: 19.5).

The conference took place from Feb 9 to 13, 2014, in San Francisco, the US. The V-NAND is an MLC (multi-level cell) product using 24 memory cell layers and has a capacity of 128 Gbits per chip.

In August 2013, Samsung announced that it had started volume production of the V-NAND (See related article). Also, the company announced the details of the memory at Flash Memory Summit 2013, which took place in the US during the same period (See related article 2).

The area of the V-NAND chip is 133mm2, which is smaller than the area of the new 16nm 128Gbit NAND flash memory chip that Micron Technology Inc announced at ISSCC 2014 (173.3mm2). The bit density of the V-NAND is 0.96 Gbits/mm2, which Samsung claims is the highest in the industry.

However, the current manufacturing cost of the V-NAND is considered to be higher than that of the latest planar NAND. It is because 3D NAND requires, for example, a process of opening high-aspect-ratio memory holes in its stacked films, requiring new capital investments.

The 24-layer V-NAND that Samsung announced this time is the first-generation product. And many consider that only the second- or third-generation product with an increased number of memory cell layers will be able to compete with planar NAND in cost. The company plans to release 1-Tbit V-NAND in or after 2017.

For the first-generation V-NAND, Samsung emphasized its high performance and reliability. It seems that the company targets the latest technology at high-performance applications such as enterprise SSDs and will see how users will respond.

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Source: TechOn

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