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Green Memory in the News

Samsung achieves DDR3 size, calls it an efficiency breakthrough

Mar. 12. 2014
Samsung Computerworld - Samsung this week announced a breakthrough in the evolution of smaller, more efficient DRAM memory. The company has produced its first 20nm, 4Gbit DDR3 DRAM.

As with all semiconductor technology, the smaller the transistors, the more capacity can go into a form factor. The smaller the circuitry, the cheaper it is to manufacture chips with the same or even greater capacity.

The DDR3 is used in desktops, notebooks, ultrabooks and tablets where Samsung said "customers will see a significant power savings," as well as cost savings.

"While we cannot speak for [device manufacturers], we believe that customers will benefit from a significantly lower total cost of ownership," a Samsung spokesman said in an email reply to Computerworld.

Samsung is already providing the new DDR3 chips to some manufacturers, and it expects that they will be available in computing devices later this year.

Over the past five years, Samsung has shrunk its DRAM transistors from 50nm (in 2009) to 30nm (in 2010) to 25nm (in 2011) to the 20nm process technology today.

While NAND flash has the lead in the race toward single-digit nanometer processes (it has been at 19nm for some time), DRAM circuitry is decisively more difficult to shrink.

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Source: Computerworld

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