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Green Memory in the News

Samsung Pushes DDR3 Design & Manufacturing to New Efficiencies

Mar. 18. 2014
Samsung TORONTO, Canada -- As DDR4 awaits widespread adoption and new technologies such as hybrid memory cube continue to be fleshed out, there remains opportunity to improve on DDR3’s performance, and more importantly, its design and manufacturing.

Last week, Samsung announced it was mass producing what the company said is the most advanced 4Gb DDR3 memory based on a new 20 nanometer process technology using immersion ArF lithography.

Sylvie Kadivar, senior director for strategic DRAM marketing at Samsung Semiconductor, said the advancement overcomes the DRAM scaling hurdle, which she said is more difficult than scaling with NAND flash. “This new design approach has addressed the challenge of scaling, which the design community has been facing as they are heading into the future, such as the 10 nanometer lithography,” she said. “It’s not only important for DDR3 today, but it’s also going to be important for DDR4.” The challenge has been what is beyond 20 nanometers and what’s going to happen next, Kadivar said.

A key element of the new design and manufacturing technology is a modified double patterning and atomic layer deposition that allows for continued scaling. The new approach to double patterning enables 20nm DDR3 production using current photolithography equipment, Kadivar said. “We have found the most efficient way to manufacture high density DDR3 technology, in this case 4Gb.” Samsung has also created ultrathin dielectric layers of cell capacitors with a very high level of uniformity, which is an important contributor to higher cell performance.

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Source: EE Times

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