• Downloads
  • Videos
  • Mobile Apps
  • Find Your Server Memory
  • Savings Calculators

Print Facebook Twitter

Green Memory in the News

Samsung Announces 2nd-Generation 3D NAND

Jun. 10. 2014
Samsung Announces 2nd-Generation 3D NAND Samsung has announced mass production of the company’s new second-generation 3D NAND flash. According to the company the product will be the basis for three new SSDs aimed at the high-end PC market.

The new generation of chip uses 32 layers in the 3D stack; Samsung’s original V-NAND was built using a 24-layer stack. In theory this should allow Samsung to make the die area of a second-generation V-NAND chip 24/32nds or 75% as large as its first-generation predecessor to cut costs and therefore improve Samsung’s V-NAND profitability. Another way to look at this is that the company should be able to get 32/24ths as many (or 33% more) of the same density chip on a wafer without substantially increasing the wafer’s cost.

If you want to delve deeply into the details of 3D NAND flash layers feel free to look at another blog I write called The Memory Guy in which I cover 3D NAND flash manufacture in great detail. That blog is aimed at semiconductor insiders and is pretty technical, where the Forbes “Chip Talk” blog is intended to cover semiconductors from a business perspective.

There is not yet a press photo of Samsung’s new device, so I am publishing this post using the company’s press photo of its first-generation V-NAND.


Source: Forbes News