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Green ddr4

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Meet diverse enterprise workload demands with higher bandwidth and reduced power consumption

Accelerated adoption of cloud computing, virtualization and high-performance computing (HPC) technologies has made higher-performing, higher-density memory a key factor for server operation. Highly virtualized environments enable companies to run numerous applications on a single server instead of multiple servers. A single server with more virtual machines (VMs) requires not only a higher processor speed, but also higher memory densities.

Requirements for memory are become more diverse to support a wide range of enterprise server applications, from less critical workloads to those that are mission critical. Enterprise-level tasks that run on high-end servers, such as database access or transaction processing, need a large capacity of in-memory systems and higher reliability. Mid-range servers used for virtualization or consolidation require high bandwidth and scalability. Small form factor, lower power consumption and low cost are essential requirements for workloads on low-end servers used for web, collaboration and infrastructure systems.

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Rising energy costs and the need to provide greater environmental sustainability are also placing demands on chipmakers and server vendors. A server running a virtualized environment can achieve a higher utilization that, in turn, increases the total power consumption of the server. As a result, CPU and server companies are focusing intently on the development of next-generation green IT systems.

The memory that supports next-generation, green IT systems should meet the diverse demands of enterprise workloads with higher performance, increased density, improved reliability and low power consumption.

Samsung DDR4 SDRAM

Provide an optimized solution for enterprise applications

Samsung DDR4 is an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with lower power requirements than previously available memory products.

The Samsung portfolio of DDR4-based modules using 20nm-class process technology includes registered dual inline memory modules (RDIMMs) and load-reduced DIMMs (LRDIMMs). These memory modules are available with initial speeds up to 2400Mbps, increasing to the Joint Electron Devices Engineering Council (JEDEC)-defined 3200Mbps.
The portfolio includes the following modules :

  • 8 GB DDR4 RDIMMs
  • 16 GB DDR4 RDIMMs
  • 32 GB DDR4 RDIMMs/LRDIMMs
  • 64 GB DDR4 RDIMMs/LRDIMMs
  • 128 GB DDR4 RDIMMs
High speed and low voltage of DDR4 SDRAM

Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership (TCO). Samsung DDR4's enhanced reliability, availability and serviceability (RAS) features provide greater dependability and improved signal integrity (S/I).

DDR4 higher performance compared with DDR3L and DDR2

Samsung DDR4 operates at a high bandwidth range of 1600-3200Mbps, which is twice as fast as DDR3's 800-1600Mbps, for high-performance computing. Samsung DDR4 also has twice as many banks as DDR3, 16 versus 8, for increased speed, enhancing performance by 16 percent over DDR3. Use of this protocol maximizes Samsung DDR4's data transmission efficiency.

In addition, platforms that incorporate Samsung DDR4 have up to 50 percent more cores when compared to previous-generation platforms using DDR3. Samsung DDR4's platform-level benefits also include enhanced CPU-to-CPU communication performance and a vector operation speed that is twice as high as with DDR3.

Advanced Features for Performance

Increase performance for higher bandwidth

Achieving bandwidth speeds up to 3.2Gbps, Samsung DDR4 delivers higher performance at a higher speed than both DDR2 and DDR3.

Compared to DDR3L (low power DDR3), Samsung DDR4 shows an overall improvement in performance in every DIMM and a performance that is more than 40 percent better at 1 DIMM per channel.

Samsung SPEC_CPU Benchmark/DDR3L 1.35V vs. DDR4 1.2V/2Rank 16GB

Reduce power usage for greener, lower-cost computing

A major decrease in voltage and the improved I/O power efficiency of DDR4 synchronous dynamic RAM (SDRAM) translates into significant cost savings. According to Samsung internal testing, DDR4 boasts a continuous working voltage of 1.2V, a voltage that is 11 percent lower than the 1.35V consumed by DDR3L.

By adopting POD (Pseudo Open Drain) for data transmission, Samsung DDR4's input/output (I/O) power consumption is reduced by 50 percent compared to the previously-used SSTL (Stub Series Terminated Logic) of DDR3L. Overall, Samsung DDR4 shows a Performance/watt level more than 20 percent higher than DDR3L.

Measured under controller’s POR condition / Samsung Power Benchmark/DDR3L 1.35V vs. DDR4 1.2V

Provide greater reliability, availability and serviceability (RAS)

DDR3 modules provided only one RAS feature, their error-correcting code (ECC) capability. Compared to DDR3, Samsung DDR4 provides more robust RAS features, such as Cyclic Redundancy Check (CRC), Parity, Per DRAM Addressability and Gear Down Mode.

Enhanced reliability and improved S/I for mission-critical enterprise applications are directly attributable to Samsung DDR4's significant advancements in the following RAS features:

1. Cyclic Redundancy Check (CRC) for improved data reliability

CRC is an error-detecting code that detects accidental changes to raw data of DRAM's DQ. CRC confirms 100 percent detection of random 1- to 2-bit errors by enabling error detection capability for data transfer.

2. On-chip parity detection for the integrity of Command/Address

Parity for Command/Address (CMD/ADD) provides a method of verifying the integrity of command and address transfers over a link.

3. Per DRAM Addressability for enhanced signal integrity

Samsung DDR4 can control module components and enhance signal integrity by controlling the ODT of the Vref level.

4. Gear Down Mode for improved signal integrity

DDR4 Gear Down Mode allows the high speed of the DQ(data bus) to be maintained, while decreasing the high speed of the CMD/ADD.

RAS feature comparison of DDR3 and DDR4 SDRAM

Samsung DDR4 provides Post Package Repair (PPR) functionality to ensure high server reliability. PPR's Anti-fuse technology makes it possible to replace bad cells within DRAM with good ones without powering the system off and on. By repairing single bit and single row failures, this repair process reduces functional faults in the field by 51 percent.

PPR(Post Package Repair)

Mechanical reliability is enhanced via a stepping technique applied to the bottom of Samsung DDR4 memory modules. This method reduces the effort of mounting the module in the memory socket by 20 percent while also reducing the risk of common mechanical damage, such as from bending or slipping, while mounting the module.

Enhancing Mechanical Reliability

Manage a range of enterprise workloads with greater reliability, doubled bandwidth and reduced power usage

Designed with advanced system circuit architecture, Samsung DDR4 supports a wide range of server memory needs by delivering higher performance and reduced power usage with increased reliability. By taking advantage of the advanced features of Samsung DDR4, companies can achieve greater performance at a lower TCO.

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DDR3 and DDR4 specifications and features comparison

Key Features
Feature DDR3 DDR4
Component density, speed 512 Mb - 4 Gb, 0.8 - 2.1 Gbps 4 Gb - 16 Gb, 1.6 - 3.2 Gbps
Module density 1, 2, 4, 8, 16, 32 and 64 GB 8, 16, 32, 64, 128 and 128 GB
Interface Voltage (VDD, VDDQ, VPP) 1.5V, 1.5V, NA (1.35V, 1.35V, NA) 1.2 V, 1.2 V, 2.5 V
Vref External Vref (VDD, 2) Internal Vref (need training)
Data I/O Center Tab Termination (CTT) (34 ohm) POD (34 ohm)
CMD, ADDR I/O CTT CTT
Strobe Bi-dir, diff Bi-dir, diff
Core architecture Number of banks 8 Banks 16 Banks (4-bank group)
Page size (X4, 8, 16) 1 KB,1 KB, 2 KB 512 B, 1 KB, 2 KB
Number of prefetch 8 bits 8 bits
Added functions RESET, ZQ, Dynamic ODT RESET, ZQ, Dynamic ODT, CRC,
Data Bus Inversion (DBI), Multiple preamble
Physical Package type, balls (X4, 8, X16) 78, 96 BGA 78, 96 BGA
DIMM type R, LR, U, SoDIMM R, 3DS R, LR, (ECC/nECC) U/SoDIMM
DIMM pins 240 (R, LR, U), 204 (So) 288 (R, LR, U), 260 (So)