product search
Eco product
home > news > events > semiconductor exhibitions

exhibitions & forums

Nanotech Japan 2008

Nanotech Japan 2008

International Nanotechnology Exhibition & Conference

visit http://www.ics-inc.co.jp/nanotech/en
show highlights
  • Period : February 13. 2008 ~ February 15. 2008
  • Place : Tokyo Big Sight, Japan
  • Scale : 4 Halls, 484 exhibitors (including 167 overseas exhibitors), 820 booths
  • Category : Nanotechnology, Biotechnology, Surface technology, treatment and processing
general trend

Nanotech has been the world’s largest international exhibition and conference program offering unparalleled business opportunities. This can be seen by the 484 exhibiting enterprises and organizations from around the world responsible for the rapid R&D progress in nanotechnology both at home and abroad.

SAMSUNG technology
Tr. Structure Planar Structure
  • Ultra-Thin Body SOI MOSFET
  • Notched Gate MOSFET
  • Damascene Gate MOSFET
3D Structure
  • FinFET, McFET
  • MBCFET, NWFET
  • Vertical FET
Gate Dielectric & Gate Electrode Material
  • High-k Gate Dielectric (HfO, HfSiON, ZrO) Technology
  • SiGe Gate Electrode
  • Metal & Metal-nitride Gate Electrode (Co, TiN, TaN etc)
  • Ni Silicide, Co Silicide
Channel & S/D Engineering
  • High mobility channel (SiGe, Strained-Si) Tehcnology
  • Abruptly Doped Channel Technology
  • Recessed Channel
  • Ultra-shallow & Ultra-low resistance S/D Tehcnology
  • Raised S/D & Selective Epitaxial growth
  • Salicide Technology
Device Intergration
  • Multi-threshold, Multi-oxide device intergration
  • Dual WF gate for NMOS, PMOS
  • Reliability
  • Manufacturability