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K1 (UtRAM)
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90nm Technology

SAMSUNG Licenses it bulk-CMOS 90nm Process Technology from IBM.
90nm process offerings
  • 90nm : SAMSUNG Own Library
  • Wide voltage range IO FET option with only one gate oxide : L9G (1.8/2.5/3.3V), L9LP (1.8/2.5V)
  • Ultra low leakage process for mobile applications in L9LP
  • Cost effective process : VNCAP (BEOL) w/o additional mask, instead of MIM CAP, Low cost version with mask layer reduction layer reduction
  • Reliable eFuse process w/o additional process step
90nm process offerings

note :

  • (1) Thin : Thin Gox
  • (2) Thick : Thick Gox
  • (3) HD : High Density
  • (4) LP : Low Power
  • (5) HS : High Speed