Mobile SDRAM
The world leader in advanced memory technology provides the industry’s first one gigabit (Gb) Mobile DRAM (dynamic random access memory) for mobile products, using 80nm process technology.
The new chip, also known as low-power DDR (double data rate) or synchronous DRAM , will be more cost effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products.
The new 1Gb Mobile DRAM chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.
Mobile-SDR/DDRs are designed to consume less Power than normal Synchronous DRAM by adopting micro circuit architecture and low power supply with 1.8V, 2.5V or 3.0V. Additionally SAMSUNG Electronics support special function - PASR(Partial Array Self Refresh), Internal TCSR(Automatic Temperature Compensated Self Refresh) which extend battery life both during operation and on standby mode.
Programmable refresh for self refresh mode to allow the system to control power as a function of temperature.
PASR (Partial Array Self Refresh)Programmable memory array size to be refreshed during self refresh operation to reduce power.
DPD (Deep Power Down)Operating mode to achieve maximum power reduction by cutting the power of the whole memory array of the devices. Data will not be retained once the device enters Deep Power Down Mode. Full initialization is required when the device exits from Deep Power Down Mode.
DS (Programmable Driver Strength)Programmable Driver strength(Full, 1/2, 1/4 ) to adjust different system Environment by using EMRS.
