FAQs
NAND Flash, NOR Flash and OneNAND Flash belong to a group of NVM products.
NAND Flash is a sequential access device appropriate for mass storage applications, while NOR Flash is a random access device appropriate for code storage applications. OneNAND Flash has both advantages of NAND Flash and NOR Flash, in that it is appropriate for both mass storage and code storage. In addition, OneNAND is widely used in mobile/consumer applications, such as mobile phones, digital still cameras, PMP, navigation, and portable game players
With the Mux-type, the Address pins are combined with DQ (data) pins, while in the Demux-type the Address pins and DQ pins are separate. If you considered reducing the pin count of the device, we would recommend using the Muxed OneNAND. Muxed OneNAND supports 1.8V only, while the Demuxed OneNAND’s lower density (less than 1 Gbit) supports both 1.8V and 3.3V options. Over 1 Gb OneNAND has only the 1.8V option, no matter which type it is.
The following table illustrates comparative data between OneNAND and NAND in terms of a 2 KB read and write operation. Mobile devices can save energy by taking advantage of OneNAND when reading data. Although OneNAND consumes a bit more energy when writing data, the device with OneNAND can get more advantages from it, such as efficient bus utilization, since OneNAND supports synchronous write operation.
| Device | Read | Write |
|---|---|---|
| OneNAND 1Gb(A) 1.8V, 83Mhz | 2.2uJ | 10.4uJ |
| NAND 1Gb(A) 2.65V, 45ns, Small block | 4uJ | 23.59uJ |
| NAND 1Gb(A) 3.3V, 30ns, Large block | 4.2uJ | 12.9uJ |
| NAND 1Gb(A) 1.8V, 50ns, Large block | 2.3uJ | 5.2uJ |
| OneNAND 1 Gb(A) | NAND 1 Gb(A) | |||
|---|---|---|---|---|
| [83 MHz 1.8V, x16] Large Block |
[2.65V,x8] Small Block |
[3.3V,x8] Large Block |
[1.8V,x8] Large Block |
|
| Read Time | 12us | 90us | 60us | 100us |
| Load Time | 30us | 60us | 25us | 25us |
| Write Time | 12us | 90us | 60us | 90us |
| Program Time | 220us | 800us | 200us | 200us |
| Read Current | 25mA | 10mA | 15mA | 10mA |
| Load Current | 30mA | |||
| Write Current | 25mA | 10mA | 15mA | 10mA |
| Program Current | 25mA | |||
Yes, it is possible because OneNAND is designed to be compatible with NOR. ‘INT’ is the only part that is different from NOR in terms of interface. So if Samsung software is used, there’s an alternative way to operate it internally without using an INT pin. But, when you employ OneNAND instead of NOR, you should read the OneNAND datasheet carefully, since operating OneNAND is very different from operating NOR.
The block size of products under 256 Mb differs from over 512 Mb products. One page consists of 2 sectors in the under 256 Mb product, while one page consists of 4 sectors in the over 512 Mb product. The following table illustrates the comparison with NAND in terms of block, page and sector size, in terms of density. (Single chip, SLC)
| OneNAND | ||
|---|---|---|
| Sector | Page | Block |
|
512 B + 16 B |
1 KB (2 sectors) |
64 KB (64 pages) |
|
2 KB (4 sectors) |
128 KB (64 pages) |
|
| Not Available | ||
| Density |
|---|
| 256 Mb |
| 512 Mb |
| 1 Gb |
| 2 Gb |
| 4 Gb |
| NAND | ||
|---|---|---|
| Block | Page | Sector |
|
32 KB (64 pages) |
512 B (1 sector) |
512 B + 16 B |
|
128 KB (64 pages) |
2 KB (4 sectors) |
|
Although OneNAND has an x16 interface, the pin count of the MuxOneNAND is identical to that of x8 NAND. As compared to NOR, the pin count of OneNAND is less than NOR, which has same interface as OneNAND. The address pin count of NOR increases as the density grows, while address pin count (16 pins) for OneNAND is the same at all density levels.
|
Mux OneNAND™ (x16) |
OneNAND™ (x16) |
NAND (x8) |
MuxNOR (x16) |
Demux NOR(x16) |
||
|---|---|---|---|---|---|---|
|
Number of Pins |
Address | 16 | 16 | 8 | 20-23 | 20-23 |
| Data | 16 | 16 | 8 | 16 | ||
| Control | 8 | 8 | 7 | 9 | 9 | |
| Total | 24 | 40 | 23 | 29-32 | 45-48 | |
2. Since OneNAND has the H/W ECC function, it makes the operation faster than the S/W ECC operation. When designing a system, the ECC function helps develop a shorter span because the 1-bit error can be handled in the memory itself.
3. The read performance, considered a downside of NAND, is as good as NOR, and the write performance, regarded as a shortcoming of NOR, is as good as NAND.
| OneNAND 1Gb(A), 83Mhz | NAND 4Gb(M, SLC) | NOR (SLC, 66Mhz) | |
|---|---|---|---|
| Read Performance | 108MB/s (Interface : 166MB/s) |
28.5MB/s | 133MB/s |
| Write Performance | 9.3MB/s | 8MB/s (1plane program) |
0.17MB/s |
| Erase Performance | 2.1GB/s (Multi-block Erase) |
64MB/s | 0.21MB/s |
| Usage | CPU | Endian | ||
|---|---|---|---|---|
| ARM | Non ARM | Little | Big | |
| Storage | O | O | O | O |
|
Unified Storage (Code + Data) |
O | X | O | O |
- When OneNAND is used for Storage, it doesn’t matter whether CPU is ARM or MIPS.
-
On the other hand, when it’s used for Code & Storage (as unified storage), it’s applicable to
ONLY ARM Processor - Applicable ARM CPU : S3C2410, S3C2440, OMAP2420, OMAP850, PXA270
- XSR v1.5 can support Big endian mode with OneNAND




