fusion memory
SAMSUNG introduced its fusion memory 'Flex-OneNAND' at the 『SAMSUNG Mobile Solution (SMS) Forum 2007』held in Taiwan in March 2007, attracting much interest among memory and mobile application businesses. The fusion memory will allow users to set memory capacity and speed easily.
fusion memory is developed to meet the demands of increasingly multi-functioning and high-performance digital devices including digital TVs and mobile phones. The chip is a combination between types of memory such as DRAM and flash memory and non-memory such as logic and S/W on a single chip.
In this sense, this product is the next generation semiconductor that provides high memory capacity of DRAM, high speed of SRAM, non-volatility of flash memory and some characteristics and strengths of logic semiconductor (a kind of artificial intelligence semiconductor).
Combination between types of memory such as DRAM and Flash and non-memory such as logic and Software on a single chip!
The first generation of fusion memory, which appeared in early 2000, was created through a physical combination of different memory chips. These chips combined the strengths of two or more chips on one chip. Chips such as MCP (Multi Chip Package) and SiP (System in Package) are examples of physical combination of chips.
2nd generationThe second generation, which emerged in 2004, integrated various functions such as memory logic, sensor and CPU on one chip. This is similar to OneNAND in that it combined functions such as logic, sensor, CPU and S/W on a single chip.
3rd generationThe third generation combined DRAM and SRAM. By creating one chip with two or more memory chips and integrating their strengths, the third generation chips can greatly contribute to lowering costs while reducing size, weight, thickness of devices and at the same time providing more functions. This is the most representative product of SAMSUNG along with Flex-OneNAND.
development trend for fusion semiconductors
SAMSUNG announced that it successfully developed 512 MB OneDRAM at the International Electron Devices Meeting (IEDM) opened in San Francisco, US, on December 11, 2006. SAMSUNG said, “OneDRAM can cut production costs because it reduces the number of chips used. It can cut the circuit size by 50% and power consumption by 30%,” and “Thanks to this technology, mobile IT devices will rapidly become smaller.” OneDRAM combines two different types of memory, DRAM and SRAM, on a single chip smaller than the thumbnail.
Currently, mobile devices use two CPUs, one for communications and the other for multimedia functions including cameras, movies and 3D games. Following this trend, data transmission speed is becoming more important. OneDRAM is a fusion semiconductor that combines DRAM and SRAM, each used for communications and media such as movies and cameras. In other words, OneDRAM is a combination of communications CPU and media CPU on one DRAM.
With the appearance of OneDRAM, effective data transfer between two CPUs has become possible allowing high speed of five times as fast as existing chip, cost reduction in system construction due to minimized number of chips, 50% reduction in circuit size and 30% cut in power consumption.
Flex-OneNAND™
SAMSUNG introduced its fusion memory 'Flex-OneNAND' at the
『SAMSUNG Mobile solution (SMS) Forum 2007』for the first time in the global market.
This product, while maintaining all the high performance of the existing OneNAND, integrates two types of NAND flash, SLC (Single Level Cell) and MLC (Multi Level Cell), on a single chip and combines the strengths of the two--high performance and high capacity. SAMSUNG's third generation fusion semiconductor allows customers to choose the memory capacity they want using the S/W provided by SAMSUNG. Customers can meet their changing needs flexibly while suppliers can respond to customers demand more agilely.
Flex-OneNAND is 4 times faster than MLC when reading and 1.1 times when writing. Production costs can be cut as much as 50% compared to MLC or SLC.
| category | MLC NAND flash |
Flex-OneNAND™ | times as efficient as MLC | ||
|---|---|---|---|---|---|
| MLC area | SLC area | MLC area | SLC area | ||
| Reading (per second) |
17MB | 67MB | 87MB | 4 | 5 |
| Writing (per second) |
4.5MB | 5MB | 15MB | 1.1 | 3.3 |
When the pace of mobile device convergence is being accelerated, fusion memory can be used in a wide range of products including cell phones, PMPs (Portable Multimedia Player) and MP3 players.
SAMSUNG announced "Platform Solution" that combined OneDRAM and the next generation AP (Application Processor). This platform replaces communications CPU and multimedia CPU on advanced cell phones with OneDRAM which has data sharing structure. The new solution simplifies mobile device architecture at lower costs providing customers with benefits such as reduced size, enhanced performance, reduced power consumption and lower prices. Moreover, more demand is expected to be created in other mobile device markets that require high performance computing technology such as PMP and PND (Portable Navigation Device).
One characteristic of Flex-OneNAND is that it allows users to adjust memory capacity and speed. Take a mobile phone business that uses 4-gigabyte Flex-OneNAND for example. If the company wants to make products fit for watching high-speed UCC movie, it may enhance SLC to boost speed and cut capacity down to 2 gigabytes. In the case of specialized phones for high capacity maps, the company can make a 4-gigabyte product mostly with MLC. So, with this product set producers no longer have to use the product made by the memory chip maker. Instead, they can optimize specifications of memory to fit their products. Because one chip stores and processes all kinds of data simultaneously, cell phone sizes can be reduced dramatically, and makers can dynamically respond to the shifting demands of customers.




