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c-Dance Collaboration

65nm Technology

SAMSUNG’s 65nm process technology is a collaborative technology development initiative between SAMSUNG, IBM, Chartered and Infineon
65nm process offerings
  • 65nm : Common Platform Library
  • Various TR, Oxide and Backend stack options for customer's product and low-cost version of LP process
  • L6LP : 34 mask layers (6 metal stack) - 4 SG TR variants (HVT, RVT, LVT, ZVT)
    - 2 Oxide variants (SG, DG)
  • L6G : 42 mask layers (6 metal stack)
    - 4 SG TR variants (HVT, RVT, LVT, ZVT)
    - 2 Oxide variants (SG, DG)
65nm process offerings

note:

  • (1) Thin : Thin Gox
  • (2) Thick : Thick Gox
  • (3) MS / L6S : 2.5V Stacked NFET or Optional 3.3V Process