• 90nm : SAMSUNG Own Library
• Flexible FET options : L9G (21), L9LP (14)
• Wide voltage range IO FET option with only one gate oxide : L9G (1.8/2.5/3.3V), L9LP (1.8/2.5V)
• Ultra low leakage process for mobile applications
• Cost effective process : VNCAP (BEOL) w/o additional mask, instead of MIM CAP, Low cost version with mask layer reduction (L9G - 34 mask layer w/ 6M)
• Reliable eFuse process w/o additional process step

note:

• (1) Thin : Thin Gox
• (2) Thick : Thick Gox
• (3) HD : High Density
• (4) HS : High Speed
• (5) LP : Low Power
• (6) : Thin Gox
• (7) : Intermediate Gox
• (8) : Thick Gox