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c-Dance Collaboration

90nm Technology

SAMSUNG licenses it bulk-CMOS 90nm process technology from IBM
90nm process offerings
  • 90nm : SAMSUNG Own Library
  • Flexible FET options : L9G (21), L9LP (14)
  • Wide voltage range IO FET option with only one gate oxide : L9G (1.8/2.5/3.3V), L9LP (1.8/2.5V)
  • Ultra low leakage process for mobile applications
  • Cost effective process : VNCAP (BEOL) w/o additional mask, instead of MIM CAP, Low cost version with mask layer reduction (L9G - 34 mask layer w/ 6M)
  • Reliable eFuse process w/o additional process step
90nm process offerings

note:

  • (1) Thin : Thin Gox
  • (2) Thick : Thick Gox
  • (3) HD : High Density
  • (4) HS : High Speed
  • (5) LP : Low Power
  • (6) DGO / TGO : Thin Gox
  • (7) DGO / TGO : Intermediate Gox
  • (8) DGO / TGO : Thick Gox