New Technology
SAMSUNG Flipchip Readiness
Flipchip Technology
Flipchip & PoP Process Flow
Bumping Technology
| 2008 | 2009 | 2010 | ||
|---|---|---|---|---|
| Fab Process | 65nm | 45nm | 32nm | |
| Bump | Material | Eutectic Sn-Pb | Pb-free (Sn-Ag) | |
| Pitch | 180um |
150um |
120um |
|
| Height | 90um | 75um | 70um | |
| Pad Open size | 66um | 51um | 36um | |
| UBM | Size | 90um | 75um | 60um |
| Material & THK | EP-Ni (2um) | EP-Ni (5um) | EP-Cu (40um) | |
- Environmental Friendly and Fine Pitch
- 150um Pitch can be achieved by Lead-free solder bumping (Plating)
- To meet 120um pitch, Thick Cu-UBM will be incorporated
Substrate Technology
- Low CTE material for warpage reduction
Normal : 14ppm, Low-CTE : 11ppm/2008, 6ppm/2009 - Thickness reduction for Low package height
0.29mmt/2008, 0.25mmt/2009, 0.22mmt/2009 - Fine Pitch for routing density
Plating-bar less : 2008
Line/Space 30/30um(2008), 25/25um(2009), 20/20um(2010)
