Samsung’s 14nm process uses FinFET structure, unlike the previous process’ planar structure. In a planar structure, gate is attached to the transistor on only one surface, whereas in a FinFET structure, gate is attached on three sides of the channel allowing more effective control of the current leakage than planar. Also, in planar structure, electrons can only move from source to drain through one surface under the gate, whereas in FinFET structure, electrons can move across three surfaces of the fin-shaped 3D structure. Furthermore, with 14nm process’ shorter gate length, which means shorter distance between the source and the drain, electrons need to move shorter distance enabling transistors to switch on and off quickly. Simply put, if the channel is a road, there are more number of lanes that are shorter in length. With more paths that are shorter in length, more electrons can move faster through the channel resulting in enhanced performance.