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  • Leading the Server to Excel Beyond Expectations

    Server DRAMLeading the server to excel beyond expectations.

    A reliable partner that relentlessly delivers outstanding performance and efficiency.


The memory ready to meet
massively growing workloads.

Every single day your servers need to process even more data, threatening your business with slow performance and higher operational costs.
Samsung DRAM is designed to deliver dashing speed and to boast high capacity allowing more workloads to be completed
while optimizing the total cost of ownership.
Tackle heavy workload demands with fast speed. Samsung DDR4 RDIMM with 2xnm process technology enables initial bandwidth up to 2,400 Mbps, and has the technology to achieve up to the JEDEC-defined 3,200 Mbps, double the speed of DDR3.
Tackle heavy workload demands with fast speed.
Samsung's advanced DRAM enables your data centers to handle increasing data traffic and multiple applications. Processing large workloads with outstanding speed, Samsung server DRAM also offers fast recovery from unexpected failures.

Samsung DDR4 RDIMM with 2xnm process technology enables initial bandwidth up to 2,400 Mbps, and has the technology to achieve up to the JEDEC-defined 3,200 Mbps, double the speed of DDR3.
Achieving unprecedented capacity through TSV technology.
Achieving unprecedented capacity through TSV technology.
Samsung’s advanced process and package technology delivers greater capacity with fewer DRAMs in the server. Samsung DRAM is designed to reduce physical space requirements and related costs.

Samsung equips DDR4 with 8Gb chips doubling the density of DDR3’s 4Gb. Using the 8Gb chips, TSV RDIMM provides a maximum capacity of 128GB.

The high capacity RDIMM can also replace LRDIMM that was widely used for its high capacity despite its relatively slow speed.

Efficient power consumption delivers lower costs.
Efficient power consumption delivers lower costs.
With its unique 2xnm and TSV technology, Samsung server DRAM consumes less power without compromising its performance. Low power consumption leads to less heat generation, and these benefits mean a large reduction in energy and cooling costs.

Samsung DDR4’s 2xnm technology and low operating voltage of 1.2V achieve approximately 26% higher energy efficiency than DDR3. In memory module as a result, Samsung TSV RDIMM reduces both power consumption and heat generation by around 28%.
Your trusted partner for reliable server performance.
Your trusted partner for reliable server performance.
To meet the demands of data centers as they run more critical systems and process more traffic, Samsung DRAM provides high reliability and availability for a longer period of time without failure.

The DDR4’s enhanced RAS feature detects and notifies when data transfer errors occur. This means that Samsung DRAM delivers the superior data reliability and signal integrity necessary for mission-critical enterprise applications.

* RAS : Reliability, Availability and Serviceability

Catalogue

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Partnumber Production Status Density Organization Voltage(V) Speed Power Bank/ Interface Package
K4A4G045WE Mass Production 444444 1Gx4 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A4G085WE Mass Production 444444 512Mx8 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G045WB Mass Production 444448 2Gx4 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G045WC Mass Production 444448 2Gx4 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G085WB Mass Production 444448 1Gx8 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G085WC Mass Production 444448 1Gx8 1.2V PB, RC, TD C 16B/POD 78FBGA

DDR4

  • Temperature & Power
    • C: Commercial Temp.(0℃~85℃) & Normal Power
    • I: Industrial Temp.(-40℃~95℃) & Normal Power
  • Speed
    • PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15)
    • RC: DDR4-2400 (1200MHz @ CL=17, tRCD=17, tRP=17)
    • TD: DDR4-2666 (1333MHz @ CL=19, tRCD=19, tRP=19)

DDR3

  • Temperature & Power
    • C: Commercial Temp.(0℃~85℃) & Normal Power(1.5V)
    • Y: Commercial Temp.(0℃~85℃) & Low Voltage(1.35V)
    • M: Industrial Temp.(-40℃~95℃) & Low Voltage(1.35V)
  • Speed
    • F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6)
    • F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
    • H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)
    • K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)
    • MA: DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13)
    • NB: DDR3-2133 (1066MHz @ CL=14, tRCD=14, tRP=14)

DDR2

  • Temperature & Power
    • I: Industrial Temp.(-40℃~95℃) & Normal Power
  • Speed
    • F8: DDR2-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
    • E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)
    • F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6)
    • E6: DDR2-667 (667MHz @ CL=5, tRCD=5, tRP=5)

Related Resources

  • Brochure (2)
    • Next generation DDR4 memory optimized for supercomputing
      Samsung 20nm DDR4 SDRAM with TSV is an optimized memory solution for high performance computing.
      01 Jun, 2015
    • Samsung DDR4 SDRAM for enterprises
      Samsung DDR4 DRAM memory solution has been optimized for a wide range of enterprise-level workloads.
      10 Nov, 2015
  • Device Operation & Timing Diagram (1)
    • DDR4 Device Operation & Timing Diagram
      04 Apr, 2016
  • Others (2)
    • Memory Module Handling Guide
      Memory Handling Guide For Module Type
      20 Aug, 2015
    • PackingInformation
      Basic Packing Information For Products
      20 Aug, 2015
  • Product Guide (2)
  • Solution Brief (1)
    • Business Enhancing SAP S/4HANA with Samsung DRAM Technology
      Get a full picture of your business in real-time anywhere with SAP S/4HANA driven by Samsung DRAM.
      05 Jul, 2015
  • Solution Brief by Application (4)
    • Solution Brief for Application Server
      Prepare for the trend of dramatically increasing data with enhanced performance and efficiency.
      18 Mar, 2016
    • Solution Brief for DB Server
      Fast processing and analysis of massive amounts of data are now feasible with Samsung.
      11 Mar, 2016
    • Solution Brief for Storage Server
      Get ahead of the rapidly increasing volume of data with Samsung’s high-speed, high-capacity storage solutions.
      04 Mar, 2016
    • Solution Brief for Web Server
      Samsung’s thrilling solution is designed for an accelerated web experience. Witness how memory can satisfy your customers.
      28 Mar, 2016
  • White Paper (2)
    • Samsung’s latest 3DS/TSV DRAM technology boosting the performance of SAP S/4HANA and SAP Bank Analyzer
      The impact of Samsung’s latest 3DS/TSV DRAM technology, built into Lenovo’s cutting-edge servers, for typical environments running SAP S/4HANA and SAP Bank Analyzer
      15 Jun, 2016
    • Scaling In-Memory Data Processing with Samsung Advanced DRAM and NAND/SSD Solutions
      Samsung and VoltDB analyze advances in memory and in-memory database technologies to address challenges from massive increases.
      04 Aug, 2017

Related Insights & News

White Paper
Samsung’s latest 3DS/TSV DRAM technology boosting the performance of SAP S/4HANA and SAP Bank Analyzer
The impact of Samsung’s latest 3DS/TSV DRAM technology, built into Lenovo’s cutting-edge servers, for typical environments running SAP S/4HANA and SAP Bank Analyzer
Article
3D Technology has Taken Microchips into Another Dimension
3D semiconductor technologies
Article
Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
With the mass production of the 10nm-class 8Gb DDR4 DRAM, Samsung once again has taken the lead in advancing DRAM technology.
Solution Brief by Application
Solution Brief for Application Server
Prepare for the trend of dramatically increasing data with enhanced performance and efficiency.