Foundry

Samsung Foundry’s 28nm LPH process has been specifically developed for mobile device applications that can deliver over 2GHz processing performance, offering engineers another option for bringing leading-edge system-on-chip designs. In particular, Samsung’s 28nnm LPH process offers a 60 percent active power reduction at the same frequency. This new process will also permit a 55 percent performance boost at the same leakage as today’s typical 45nm low power (LP) SoC designs.

Knowing how critical first time silicon success is, Samsung has also brought together an extensive and comprehensive suite of 28nm LPH design enablement solutions from all major ecosystem partners. Samsung EDA solutions include full process design kits (PDKs) and design flows from Synopsys, Cadence, Mentor, and Magma.

Like Samsung's 32/28nm LP process nodes, 28nm LPH also takes advantage of High-k Metal Gate (HKMG) technology. On January 29, 2007, as a member of the International Semiconductor Development Alliance, Samsung along with IBM and other partners introduced HKMG innovation as the basis for a long-sought improvement to the transistor – the tiny on/off switch that serves as the basic building block of virtually all microchips made today. Using the HKMG material in a critical portion of the transistor that controls its primary on/off switching function enabled the development of 32/28nm chip circuitry that is designed to be smaller, faster, and more power-efficient than previously thought possible.

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