3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.
Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
Enhanced Endurance and Reliability
The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5 year warranty. With enhanced long-term reliability, the 850 EVO assures long-term dependable performance of up to 30% longer than the previous generation 840 EVO.
** Measured with Sustained Performance 12hr Random Write Test
*** Highest among 3-Bit MLC-class SSD drives
Improved Energy Efficiency
The 850 EVO delivers significantly longer battery life on your notebook* with a controller designed and optimized for 3D V-NAND that supports. Device Sleep for Windows at a highly efficient 2mW. The 850 EVO supports 25% better power efficiency than the 840 EVO during write operations thanks to ultra-efficient 3D V-NAND only consuming 50% less energy than that of traditional Planar 2D NAND.
The versatile 850 EVO mSATA has you covered no matter which connector type or physical slot size your device has, making it perfect for desktops, laptops and even ultra-thin tablet PCs.
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256-bit hardware encryption secures data without any performance degradation and complies with TCG Opal 2.0. Easily integrate into Windows with Microsoft e-drive IEEE-1667 to keep your data protected at all times.
Dynamic Thermal Guard Protection
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions to ensure the integrity of your data. The Thermal Guard automatically throttles temperatures down when temperatures rise above optimal critical threshold. This protects your data while maintaining responsiveness to help ensure your computer is always safe from overheating.
One-Stop Install Navigator
Migrate your data with ease. With the One-Stop Install Navigator, Samsung Data Migration and Magician software are installed simultaneously for your convenience to ensure that your SSD settings are optimized for an efficient data transfer.
Samsung Quality Components
As the industry SSD leader, Samsung uniquely designs, develops and manufactures products in-house. That means you're getting fully-optimized solutions for a better performance without the risk of compatibility errors.
Features and specifications are subject to change without prior notification
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
250 GB* *Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Sequential Read Speed
Up to 540 MB/s Sequential Read * *Performance may vary based on system hardware & configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write * *Performance may vary based on system hardware & configuration
Random Read Speed
Random Read (4KB, QD32):Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configurationRandom Read (4KB, QD32): Up to 95,000 IOPS Random Read * Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write * *Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Samsung 32 layer 3D V-NANDSamsung 512 MB Low Power DDR3 SDRAM
Samsung MGX Controller
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
GC (Garbage Collection)
Auto Garbage Collection Algorithm
World Wide Name supported
Device Sleep Mode Support
Power Consumption (W)
50 MW * Actual power consumption may vary depending on system hardware & configuration Average: 2.3 W *Maximum: 3.6 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
3V ± 5% Allowable voltage
1.5 Million Hours Reliability (MTBF)
32ºF - 158ºF
1500G & 0.5ms (Half sine)
Dimensions (W x D x H)
1.18" x 2" x 0.15"
5 Years Limited Warranty or 75TBW Limited Warranty