July 14, 2003 in Social Responsibility News

SAMSUNG Announces the Industry’s First Mass Production of 1Gigabit DDR SDRAMs on 300mm Wafers

Seoul, Korea - July 14, 2003: SAMSUNG Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, today announced that its 1Gigabit (Gb) DDR components are now in volume production. The high density 1Gb DDR SDRAM devices are produced on advanced 300mm wafers, utilizing a 0.10micron process technology that maximizes production efficiencies and speeds time to market.

SAMSUNG’s new 1Gb DDR SDRAM component endorses bank configurations of x4/8/16 in a single design and is available in both DDR266 and DDR333 speeds. Thirty-six TSOP2 package dies are mounted to comprise a 4GB registered DIMM, the highest capacity available for servers, workstations and supercomputers. 2GB density modules for desktop (unbuffered DIMM) and notebook (SODIMM) applications are also available in the 1Gb DDR component-based product line.

A ceremony to celebrate the first batch of wafers produced, was held with Samsung Executives, including Chang Gyu Hwang, president of Samsung Electronics memory business, at the Hwasung plant in Korea on July 14, 2003.

SAMSUNG’s experienced operation of 300mm wafer production was initiated in the second half of 2001 with the production of 512Mb DDR SDRAMs. Samsung maintains its advanced competitiveness as it sets another milestone in 300mm production, becoming the industry's first to mass produce the full line up of advanced DRAMs of 256Mb, 512Mb and 1Gb density on 0.10um circuit geometry in both 200mm and 300mm wafer lines.

The 1Gb DDR DRAM utilizing the 0.10micron technology is produced on line #11, SAMSUNG’s first 300mm mass production line.

Market researchers at Gartner Dataquest, San Jose, CA, see 1Gb DDR DRAM forming in the second half of 2003 with $900 million in sales. The market is expected to grow from $2 billion in 2004 and reach $12.1 billion by 2007.


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