June 16, 2004 in Social Responsibility News

SAMSUNG Electronics Unveils Next-generation Technology Breakthroughs at 2004 Symposia on VLSI Technology and Circuits

S EOUL , Korea ? June 16, 2004: Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, today presented a wide range of core next-generation technologies at the 2004 Symposia on VLSI Technology and Circuits, being held in Honolulu, June 15-19. A total of 22 papers from Samsung were selected on such diverse topics as 50 nanometer (nm) and beyond next generation transistor process technology, new copper interconnection technology that uses a new material Ruthenium (Ru), 70-nm NOR Flash and low-power DRAM technology, and high capacity 64Mb Phase-change RAM (PRAM).
Samsung revealed its development of a three-dimensional transistor process technology for 50 nm and beyond geometry bringing the die size to a quarter of what conventional memory chips cover today. The new paper moves up the introduction of three-dimensional transistor technology, which was initially expected for launch in 2007.
Other next generation memory technologies were introduced. Following last year's introduction, Samsung presented a high capacity 64Mb PRAM. Further expanding its expertise in nano-scale memory technology, it introduced 70-nm process technology for both NOR Flash technology and low-power DRAM.
Samsung's System LSI paper contributions continue to grow. Out of the total 22 Samsung papers selected, 8 were generated from the System LSI division. Samsung presented a new material Ruthenium as an adhesive to enhance the copper interconnection technology to secure a stable chemical vapor deposition (CVD) seed layer for copper interconnect.
The company advances further in LONOM (Localized Oxide-Nitride-Oxide Memory) technology for logic embedded flash memory with a paper introducing a new approach balancing the height difference between logic side and memory side of an embedded device, simplifying the sophisticated process steps, and moreover boosting speed, cutting power consumption and production costs bringing a more economical solution for higher business potential.
A notable approach on the System LSI front is the new concept Samsung introduced on mechanical stress engineering. Shedding light on the possibility of the effect of flickering noise, Samsung's new paper set the stage for dispute to a new direction of development in the field of mechanical stress engineering.
The Symposia on VLSI Technology and Circuits represents one of the world's most prestigious academic conferences specializing in semiconductors, along with the International Electron Device Meeting (IEDM) and the International Sold-State Circuits Conference (ISSCC). The event was first organized under joint US-Japanese sponsorship in 1981 and is held alternately in Honolulu and Kyoto each June.
The world's top semiconductor makers submit hundreds of academic papers to this conference each year. The documents are strictly screened before final selection for presentation. The Highlight Session features the top papers for the year, underscoring the individual company's technology and production expertise.
About Samsung Electronics


Samsung Electronics Co. Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2003 parent company sales of US$36.4 billion and net income of US$5.0 billion. Employing approximately 88,000 people in 89 offices in 46 countries, the company consists of six main business units: Corporate Technology Operations, Digital Appliance Business, Digital Media Business, LCD Business, Semiconductor Business and Telecommunication Network Business. Recognized as one of the fastest growing global brands, Samsung Electronics is the world's largest producer of color monitors, color TVs, memory chips, TFT-LCDs and VCRs. For more information, visit

www.samsung.com


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