September 24, 1998 in Social Responsibility News

SAMSUNG First to Deliver 1-Gbit SDRAM to Major OEM Customers

Seoul, South Korea - September, 24, 1998 - Samsung Electronics Co., Ltd., today announced that it has delivered 1-Gbit SDRAM samples to its major OEM customers Compaq, Dell, Hewlett-Packard, IBM and Sun Microsystems. Samsung is the first memory manufacturer to achieve production silicon, and 1-Gbit components will enable module capacities of 2Gigabytes and beyond.
" As the memory needs of computing devices continue to increase in line with Moore's Law, Samsung is in the forefront of delivering high-performance solutions to our customers," stated Eui Yong Chung, Director of Marketing for Memory Products. " Samsung intends to actively cooperate with software and peripheral hardware developers as well as system architects to ensure that this technology is fully enabled going forward."

The range of applications for 1-Gbit SDRAM memory spans form servers, workstations and networking devices, to PDAs, notebook PCs, HDTC and other future digital multimedia products. It is ideally suited for portable applications, such as for personal data assistants and notebook PCs, where form factor and power consumption are paramount concerns. At the 1-Gbit level, power, reliability, cost and performance gains are significant for workstations and high-end severs. The 1-Gbit SDRAM memory successfully addresses all these applications and challenges for the future.

"The recent delivery of 1-Gbit SDRAM samples to major OEMs validated Samsung as a technology leader committed to the DRAM market, stated Sherry Garber, Senior Vice President at Semico in Phoenix, Arizona.

Samsung expects to outpace its competitors by at least 12 months in the introduction of the 1-Gbit SDRAM, The new device will be commercially available around the turn of the century, with full-scale production forecast for around 2005.

Samsung is using 0.18micron leading-edge process technology to achieve a die size measuring 18.8 x 3.2 mm, or 569 square mm. The 1-Gbit design also uses triple-level metal wiring,t with one tungsten and two aluminum wiring layers. This allows the back-end design rules to be 50 percent larger that if two lagers of metal were used.

Tantalum oxide film, which is used with 1-gigabit modules, has a dielectric constant that is about three times higher than that found with conventional oxide nitrate film. Therefore, the size of the memory cells can be reduced with the tantalum oxide film, making it well suited for use with next-generation DRAMs. Tantalum oxide film technology is a key to making the world's first 0.18-micron circuitry possible.

In Samsung Electronics Co., Ltd., there are three main business units:
- Multimedia & Home Appliances
- Semiconductors
- Information & Telecommunications.

Samsung Electronics Co., Ltd., a US $13 billion (1997) flagship company of Korean-based Samsung Group, is a world leader in electronics, with operations in more than 60 countries and 85,000 employees worldwide.

CONTACT:
Jenny Chung
Overseas PR
Corporate Communications
Samsung Electronics Co., Ltd.
Seoul HQ, Korea
Tel. 82-2-727-7692 / 7823 / 7821
Fax. 82-2-727-7826
Email:jhnee@samsung.co.kr


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