November 25, 2004 in Social Responsibility News

Samsung develops Fully-Buffered DIMM for next generation Servers and Workstations

SEOUL, Korea - November 25, 2004- Samsung Electronics Co., Ltd., the leader
in advanced semiconductor technology, today announced the next-generation memory module,
a 1GB Fully Buffered, Dual In-line Memory Module (FB DIMM) based on DDR2 technology.
FB DIMM, a new design that resolves the limited memory performance of conventional
registered DIMMs, will sharply boost memory density and bandwidth to improve data
processing in servers and workstations.

“Samsung has been part of an industry-wide effort to address the demand for
higher system performance,” said Jon Kang, senior vice president, technical
marketing, Samsung Semiconductor. "We believe that our FB DIMM solution will be
adopted by the rest of the memory market and become the most widely used.”

"Emerging FB-DIMM products, such as this first offering from Samsung,
will deliver the high-performance memory required to balance the platform
and enable the promise of tomorrow’s high-speed server applications." said Jim Pappas,
director of initiative marketing for Intel’s Enterprise Platforms Group.

Currently, the memory slot access rate per channel decreases as the memory bus
speed increases, resulting in limited density build-up as channel speeds increase.
The FB DIMM eliminates this "stub-bus" channel bottleneck by using point-to-point links
that enable multiple memory modules to be connected serially to a given channel.

A memory buffer chip is added to each module to enable the use of high and
low speed interfaces. The buffer can generate speeds of 3.2Gbps to 4.8Gbps,
six-times that of the DRAM.

Samsung will begin mass production of FB-DIMMs in the first half of 2005 to meet
early market demands for the cutting-edge technology.


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