October 13, 2005 in Social Responsibility News

SAMSUNG Electronics Develops World’s First 512-Megabit DDR2 with 70nm Process Technology

Seoul, Korea, October 13, 2005 : Samsung Electronics
Co., Ltd., the world leader in advanced memory technology, announced that
it has completed development of the world-first 512-Megabit (Mb) DDR2
SDRAM using 70-nanometer process, the smallest process technology yet
applied to a DRAM device.



The new 70nm technology maintains continuity with the 80nm and 90nm processes
Samsung now uses in most DRAM production today. However, the number of
chips yielded per wafer will be at least 100% higher than could be obtained
with 90nm technology.



After completing the first sub-micron DRAM process in 2002, Samsung introduced
an 80nm version in 2003 and today has set another industry milestone with
the new 70nm version for DRAM fabrication.
Several technological innovations leading to the new 70nm process technology
for DRAM, include Samsung’s Metal-Insulator-Metal (MIM) capacitor technology,
and 3D transistor architecture known as “Sphere-shaped Recess Channel
Array Transistor (S-RACT). These advancements, respectively presented
at the VLSI Symposiums of 2004 and 2005, have been applied to overcome
the limitations of stacked DRAM cells and vastly improve the data refresh
function, critical to the 70nm 512Mb DRAM.
Samsung plans to continue to follow an aggressive time-to-market DRAM
implementation for leading nanometer process technologies as it did with
its introduction of the 90nm process in mid-2004 and the 80nm in the second
half of 2005. The 70nm process technology is scheduled to be used in production
beginning in the second half of 2006 for 512M, 1G and 2G densities.
Market research firm, Gartner Dataquest revealed in a May 2005 report
that the world DRAM market would be worth US$26.2 billion this year and
continue rising to reach US$29.1 billion in 2008. Moreover, next-generation
game consoles scheduled for release, most new 3G mobile phones, and Microsoft’s
new PC operating software program “Vista” are noted as key factors fueling
market demand next year. These developments are expected to contribute
to continued diversification and growth of the DRAM market worldwide.




< Samsung Nano-technology Reference
Sheet>


□ Samsung Electronics Development of Nano-technology
for DRAMs







2002

2003

2005






90nm

80nm

70nm












□ Samsung Electronics
DRAM Device Development







Year

‘92

‘‘94

‘96

‘98

‘01

‘04





Capacity

64Mb

128Mb

256Mb

512Mb

1Gb

2Gb












□ DRAM Market Outlook
(millions of US$)











‘04

‘05

‘06

‘07

‘08


Overall

26,317

 26,169

 24,909

 21,030

 29,108





256Mb

17,375

 11,193

 4,197

 1,042

 309





512Mb

 4,348

 11,488

 15,989

 10,721

 6,087





1Gb

 430

 1,273

 3,436

 7,711

16,955





2Gb and higher

 --

 34

 186

 1,202

 5,667





Other

 4,164

 2,181

 1,101

 356

 90









□ Sphere-shaped Recess Channel Array Transistor
(S-RCAT)


Three-dimensional transistors are embedded in


DRAM cells, each having one transistor and one capacitor. This new-concept
technology minimizes the footprint of the memory device and increases its
density.


About Samsung Electronics

Samsung Electronics Co., Ltd. is a global leader in semiconductor,
telecommunication, digital media and digital convergence technologies
with 2004 parent company sales of US$55.2 billion and net income of US$10.3
billion. Employing approximately 123,000 people in 93 offices in 48 countries,
the company consists of five main business units: Digital Appliance Business,
Digital Media Business, LCD Business, Semiconductor Business and Telecommunication
Network Business. Recognized as one of the fastest growing brands, Samsung
Electronics is the world's largest producer of color monitors, color TVs,
memory chips and TFT-LCDs. For more information, please visit www.samsung.com
.


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