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SAMSUNG Corning, Inc. has completed GaN(Gallium Nitride) Wafer Pilot Plant

on Jun 02, 2002

Samsung Corning Inc. starts a pilot-scale production of GaN(Gallium Nitride) wafer, a key material for Blue LD as a light source in the next generation high density optical data storage system used on High Density DVDs.

Samsung Corning Inc. held a Photonic Materials Pilot Plant opening ceremony at Suwon plant on May 31st.

200 attendants including Yong-ro Song, the president of Samsung Corning Inc. and Wook Sohn, the director of Samsung Advanced Institute of Technology were present to witness Samsung Corning Inc.'s bold step toward the world-wide market leader of GaN Wafer.

GaN Wafers are mainly used for;

▶ Blue LD as a light source in the next-generation high-density DVDs
▶ White LED as a new alternative to conventional lighting.
▶ Key element material for high-temperature/high-power electronic devices.

Samsung Corning Inc. is now ready to produce GaN Wafer, with technical cooperation of Samsung Advanced Institute of Technology, in such areas as research and development for last 5 years.

Samsung Corning Inc. says, GaN Wafer manufacturing techniques such as reducing defect density and removing damaged layer have been recognized by LD manufacturers as comparably better than
U.S. and Japanese competitors'.

A Samsung Corning Inc. spokesman says, "World widely, GaN Wafers are not manufactured in mass productions yet, this completion of Pilot Plant will secure Samsung Corning Inc.'s leading status
in the world-wide market."

Based on this GaN Wafer technology, Samsung Corning Inc. plans to expand its next-generation wafer business to approximately 100 Billion korean wons by year 2005.

■ GaN(Gallium Nitride) Wafer:

A next-generation compounded semi-conductor, a material used for short wavelength light-emission and photo-diode device and high-temperature/ high-power electronic devices.

- Application Field -

▶ Optoelectronic Device: Optical devices including Blue LD, White LED etc.

▶ Electronic Device: High-frequency IC chip for radio communication and high-temperature/high-power electronic device.


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