Exceptional speed, high reliability,
low energy consumption

High-performing memory empowers faster, powerful solutions.
Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.

An evolution in performance

- Increased bandwidth, up to 3,200 Mbps

Easily processing massive workloads with enhanced speed,
the DDR4 transfers more data faster than ever before,
offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.

Infographic describing increased bandwidth of DDR4 when compared to DDR3; the bandwidth of DDR4 has been increased 2X, DDR3 - 1600Mbps, DDR4 - 3200Mbps

Less energy, greater efficiency

- Advanced process technology
- Reduce core and on/off power

Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting performance, reducing TCO. The 1.2 V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.

Infographic describing 25% Lower Power Consumption

Improved reliability

- Safe CRC transmission
- Parity bit to prevent errors

System reliability is ever more critical as data centers process ever more traffic. Advanced features of the Samsung DDR4 ensure superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.

Infographic describing High Reliability that consist of Write CRC and Parity for CMD/ADD

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All product specifications reflect internal test results and are subject to variations by user’s system configuration. All product images shown are for illustration purposes only and may not be an exact representation of the product. Samsung reserves the right to change product images and specifications at any time without notice.