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Samsung Develops the Industry's Fastest DDR3 SRAM for High Performance EDP and Network Applications

on Jan 29, 2003

Samsung Electronics Co., Ltd., the world leader of advanced memory technology, today announced the development of the world''s fastest DDR3 SRAM. Generating 1.5 Gb per second, the 72Mb Double Data Rate 3 (DDR3) SRAM will support the high-density, high-speed memory requirements for next generation servers and workstations.

Complementing the small 90nm footprint, the new DDR3 SRAM requires only 1.2Volts for low-power consumption. The development of the miniature 0.79 μm2 cell (less than a millionth of a meter square area) was achieved using conventional Krypton Fluoride (KrF) laser lithography processing technology.

The breakthrough SRAM cell technology will be the topic of a paper delivered by Samsung at the International Solid-State Circuits Conference, the world's largest and most prestigious symposium on semiconductor technology, which convened at the San Francisco Marriott Hotel, February 9-13, 2003.

Samsung marks its 8th consecutive year as the world leader in the global SRAM market since 1995. The company already has a 32Mb density sample available. Mass production of the 72Mb DDR3 SRAM is expected in the second half of 2003.

About Samsung Electronics

Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, and digital convergence technology. Samsung Electronics employs approximately 70,000 people in 89 offices in 47 countries. The company is the world''s largest producer of memory chips, TFT LCDs, CDMA mobile phones, monitors and VCRs. Samsung Electronics consists of four main business units: Digital Media Network, Device Solution Network, Telecommunication Network and Digital Appliance Network Business. For more information, please visit http://www.samsungelectronics.com

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