Data Center SSDs,
advanced V-NAND

Keep your critical business running 24/7. Attain optimal performance, value, and reliability with advanced
V-NAND technology SSDs produced in-house and designed for server systems.

Angled side view of Samsung Data Center 860 DCT.

Optimal
performance

The 860 DCT is designed to achieve optimal and sustained
performance. Boost performance with faster sequential and random read/write speeds* and high IOPS consistency, ideal for
server storage systems including content delivery network systems.

* Performance measured using FIO 2.18 with queue depth 32, Z270 Intel SATA 6G port.
Measurements are performed on whole LBA range. Write cache enabled. Performance
varies depending on capacity.
Close up of server room.

Enhanced
operations
efficiency

Accomplish far more with less. Achieve higher efficiency and
performance compared to legacy storage systems,
with fewer servers, reduced power and cooling, and lower TCO,
all with efficient maintenance from the advanced
Samsung SSD Toolkit.

Efficiency - Low TCO and Management - Efficient Power symbols against an image of a woman checking servers.

Samsung
reliability and quality

Keep going with less downtime. Experience the superior SSD quality and reliability of in-house
production using Samsung built components. Empower your business to run faster,
more efficiently, and with reduced costs from world-class dependability.

V-NAND, Controller, DRAM, Firmware symbols against a scenery of server room.

SPECIFICATIONS

Form Factor

2.5 inch

Capacity

960 GB, 1,920 GB, 3,840 GB

Sequential Read Speed

Max. 550 MB/s

Sequential Write Speed

Max. 520 MB/s

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MORE SPECS

Model Code (Capacity)1)

  • MZ-76E960E (960 GB)

  • MZ-76E1T9E (1,920 GB)

  • MZ-76E3T8E (3,840 GB)

General Feature

  • APPLICATION

    Data Center

  • FORM FACTOR

    2.5 inch

  • INTERFACE

    SATA 6.0 Gbps

  • DIMENSION (WxHxD)

    Max. 100.2 x 69.85 x 6.8 (mm)

  • WEIGHT

    Max. 60g

  • NAND TYPE

    Samsung V-NAND

Special Feature

  • ENCRYPTION SUPPORT

    AES 256-bit

Performance2)

  • SEQUENTIAL READ

    Up to 550 MB/s

  • SEQUENTIAL WRITE

    Up to 520 MB/s

  • RANDOM READ (4KB, QD32)

    Up to 98,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    Up to 19,000 IOPS

  • IOPS Consistency

    Rand. Read (4KB, QD32): 100%

    Rand. Write (4KB, QD32): 90%

Power Consumption3)

  • ACTIVE READ

    Typ. Up to 1.9 W

  • ACTIVE WRITE

    Typ. Up to 2.9 W

  • IDLE

    Up to 1.05 W

Environment

  • ALLOWABLE VOLTAGE

    5.0V ± 5%

  • RELIABILITY (MTBF)4)4)

    1.5 Million Hours

  • UBER5)5)

    1 sector per 1015 bits read

  • OPERATING TEMPERATURE

    0 - 70 ℃

  • SHOCK

    1500G, duration 0.5 ms, Half Sine Wave

Warranty

  • MZ-76E960E (960 GB)

    5 Year or 0.2 DWPD

  • MZ-76E1T9E (1,920 GB)

    5 Year or 0.2 DWPD

  • MZ-76E3T8E (3,840 GB)

    5 Year or 0.2 DWPD

  • 1) 1 GB = 1 Billion bytes by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
  • 2) Based on PCI Express Gen3 x4.
    1) Random performance measured using FIO 2.7 in CentOS6.6 (kernel 3.14.29) with 4KB (4,096 bytes) of data transfer size in queue depth 32 by 4 workers and Sequential performance with 128KB (131,072 bytes) of data transfer size in queue depth 32 by 1 worker.
    2) 1 MB/sec = 1,000,000 bytes/sec was used in sequential performance.
  • 3) Actual power consumption may vary depending on system hardware & configuration. Active power is measured using IOMeter2006 on Windows Server 2012.
  • 4) MTBF is Mean Time Between Failure. By definition, Mean Time between Failures (MTBF) is the estimated time between failures occurring during SSD operation.
  • 5) Uncorrectable Bit Error Rate (UBER) is a metric for the rate of occurrence of data errors, equal to the number of data errors per bits read as specified in the JESD218 document of JEDEC standard. For enterprise applications, JEDEC recommends that UBER should be below 10-16.
    *Comparisons are based on internal test results with 2.5-inch 7200 RPM SATA HDDs.

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