Samsung Semiconductor SSD The Ideal Write-Intensive Solution

SSD SM863a

The Ideal
Write-Intensive
Solution

SSD for Write-intensive Data Centers

With a higher level of endurance, the SATA 2.5-inch SM863a Solid State Drive (SSD) is the ideal choice for write-intensive
applications such as servers for OLTP (online transaction processing),email and database.

Samsung enterprise SSD, SM863a

Sustain Endurance
with V-NAND Technology

The SM863 is designed with Samsung V-NAND technology to provide all the essentials for data center environments
- more capacity, speed, endurance and power efficiency. As a result, the SM863a is optimal for 24/7 data center operations under heavy workloads.

Samsung enterprise SSD, SM863a V-NAND technology

Accelerate Performance

The SM863a delivers outstanding 4 KB random read/write IOPS of up to 95,000/28,000. It also boasts exceptionally low latency and
a high level of QoS(Quality of Service), imperative for fast processing servers.

Samsung enterprise SSD, SM863a high Qos, IOPS consistency

Increase Data Security

The SM863a protects data with AES 256-bit hardware-based encryption.
This encryption engine secures data without the performance degradation often experienced with software-based encryption.

Samsung enterprise SSD, SM863a security

Ensure Data Integrity

The SM863a demonstrates a low probability of data corruption. End-to-end protection keeps data consistent along the entire data transfer
path and Power Loss Protection safeguards data in the write cache in the event of power failure.
The Dynamic Thermal Guard algorithm monitors the temperature of the SSD in order to prevent thermal shutdown.

Samsung enterprise SSD, SM863a data integrity

Technology Leader in Innovation

Samsung is a leading solution provider that designs and integrates critical components of the Solid State Drive in house. Because Samsung
has intimate knowledge of every component and is a leader in V-NAND technology innovation, it can fine-tune each element and create perfect synergy.

Samsung enterprise SSD, SM863a V-nand, dram, controller, firmware

SPECIFICATIONS

Form Factor

2.5 inch

Capacity

480 GB, 960 GB, 1,920 GB

Sequential Read Speed

Max Up to 510 MB/sec

Sequential Write Speed

Max Up to 485 MB/sec

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MORE SPECS

Model Code (Capacity)1)

  • MZ-7KM480N (480 GB)

  • MZ-7KM960N (960 GB)

  • MZ-7KM1T9N (1,920 GB)

General Feature

  • Application

    Data Center

  • FORM FACTOR

    2.5 inch

  • INTERFACE

    SATA 6Gb/s
    (compatible with SATA 3Gb/s & SATA 1.5Gb/s)

  • DIMENSION (WxHxD)

    100.2 X 69.85 X 6.8 (mm)

  • WEIGHT

    Max 54.3g

  • STORAGE MEMORY

    Samsung V-NAND

  • CONTROLLER

    Samsung Mercury Controller

  • CACHE MEMORY

    512MB Low Power DDR3 (480 GB)
    1GB Low Power DDR3 (960 GB)
    2GB Low Power DDR3 (1,920 GB)

Special Feature

  • TRIM Support

    TRIM Supported

  • S.M.A.R.T Support

    S.M.A.R.T. Supported

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit

  • WWN SUPPORT

    World Wide Name supported

Performance2)

  • SEQUENTIAL READ

    480 GB, 960 GB, 1,920 GB: Up to 510 MB/sec

  • SEQUENTIAL WRITE

    480 GB, 960 GB, 1,920 GB: Up to 485 MB/sec

  • RANDOM READ (4KB, QD32)

    480 GB, 960 GB, 1,920 GB: Up to 95,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    480 GB: Up to 19,000 IOPS
    960 GB: Up to 25,000 IOPS
    1,920 GB: Up to 28,000 IOPS

Power Consumption

  • Active Write3)

    480 GB: Typ. 2.8 W
    960 GB: Typ. 2.9 W
    1,920 GB: Typ. 3.0 W

  • Active Read4)

    480 GB: Typ. 2.3 W
    960 GB: Typ. 2.4 W
    1,920 GB: Typ. 2.5 W

  • Idle5)

    480 GB, 960 GB: 1.3W
    1,920 GB: 1.4W

Environment

  • ALLOWABLE VOLTAGE

    5V ± 5%

  • RELIABILITY (MTBF)

    2.0 Million Hours

  • OPERATING TEMPERATURE

    0 - 70 ℃

  • Shock

    1,500G, duration 0.5ms

Software

  • MANAGEMENT SW

    Samsung SSD DC Toolkit

  • 1) Actual usable capacity may be less. (due to formatting, partitioning, operating system, applications or otherwise)
  • 2) Performance may vary based on system hardware & configuration.
  • 3) Active Write power is measured on 128 KB sequential write. (QD32, Worker1)
  • 4) Active Read power is measured on 4 KB random read. (QD4, Worker4)
  • 5) Idle power is measured with DIPM off.

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