September 20, 2004 in Social Responsibility News

SAMSUNG Announces Major Semicon Achievements

SAMSUNG Introduces Industry's First 60-Nanometer 8-Gigabit NAND Flash Memory

SEOUL, Korea - September 20, 2004 : Samsung Electronics Co., Ltd., the leader in advanced
semiconductor technology, announced today that it has developed the industry's
first 60-nanometer (nm) 8-Gigabit (Gb) NAND Flash memory device for data storage medium
such as low density mobile hard disks for mobile appliances.

“NAND flash technology development continues to double density growth on an
average of every 12 months,” said Dr. Chang Gyu Hwang, president and CEO of
Samsung Electronics' Semiconductor business. Verifying the New Memory Growth Model he first presented at the ISSCC's 2001conference, Dr. Hwang said the industry has seen

densities grow from 256 Megabit (Mb) in 1999, to 512Mb in 2000, 1Gb in 2001, 2Gb in 2002, 4Gb in 2003 and now 8Gb in 2004”

Samsung's advanced 60nm process technology is two thousandths the width of a piece
of human hair, and achieves approximately 30 percent reduction in cell size over the
70nm 4Gb NAND Flash memory developed last year. The result is the world's
smallest 0.0082㎛2 per bit cell size.

The key to development at such high densities and fine circuitry design is a
3-D cell transistor structure and high-dielectric gate insulating technology that
minimizes the interference level between cells. In addition, by utilizing the most
widely used KrF lithography technology bit cost is reduced by 50 percent.

Samsung is further enhancing its technology base by introducing its new multi
level cell (MLC) technology in the 60nm process technology. The new 8Gb MLC NAND
flash memory broadens the company's flash memory portfolio, meeting increasing market
demand for efficient and cost effective non volatile storage devices. MLC technology also
offers designers a competitive choice for low power, small form factor storage solutions
that enable low density mobile internal hard disks (HDD) for compact mobile applications.

The 8Gb NAND flash memory will allow designs of up to 16Gigabytes (GB) of storage on
a single memory card. That 16GBs of memory translates into storage of up to 16 hours
of DVD quality video or 4,000 (five minutes per song) MP3 audio files.

According to market research firm iSuppli, the NAND flash market has doubled annually
in volume from $900 million in 2001 to $4.2 billion in 2003. iSuppli expects NAND sales
to reach $7.2 billion this year and $9.9 billion in 2005. This contrasts the growth
of NOR flash sales, which shows a three percent CAGR and sales expanding from
$6.7 billion in 2001 to a forecasted $7.6 billion in 2005.

In line with these market trends, Samsung's NAND flash business has shown
strong growth expanding from $400 million in 2001 to $2.1 billion in 2003.

The company is focused on accelerating production of advanced devices with
2Gb NAND flash production shipping over 10 million pieces per month to date in 2004.

Samsung expects to launch mass production of the 4Gb NAND flash by the first quarter
of 2005. This year Samsung expects to double volume of NAND sales and account for
65 percent global market share.

SAMSUNG Shows Industry's First 2-Gigabit DDR2 SDRAM

SEOUL, Korea - September 20, 2004 : Samsung Electronics Co., Ltd.,
the leader in advanced semiconductor technology, today announced the industry's
first 2-Gigabit (Gb) DDR2 SDRAM utilizing 80-nanometer (nm) process technology. T
he high density, DDR2 solution will enhance server and workstation performance and
enable faster deployment of memory intensive applications like real time video conference,
remote medical service, two-way communications, and 3-D graphics.

Samsung developed the DDR2 SDRAM using an advanced 80nm process technology,
overcoming the industry expectations that 2Gb DRAM manufacture would
require sub 65nm circuitry.

The new DRAM technology breakthroughs include a 3-D transistor technology,
recess channel array transistor (RCAT), and a new concept architecture process.

First introduced 2003, RCAT is a technology unique to Samsung that reduces
transistor area space by implementing a 3-D structural design, increasing the integration
level for higher density on a given area.

To address the high performance features of the DDR2 specification, Samsung adopted
a double poly gate technology, 20-angstrom level ultra thin oxide film process,
and a triple-layer metal circuitry. The high speed process technology coupled with
the feasible 80nm technology also advances the time-to-market availability of the new
DDR2 device.

Market research firm, Gartner Dataquest forecasts that DDR2 technology's
market share will grow from 11 percent this year to 50 percent by year-end 2005,
making DDR2 the mainstream DRAM product.

The company expects aggregate sales of DDR2 to reach 15million units in September
and will continue to dedicate more of its DDR production to the high performance
technology aiming for DDR2 to comprise 32% of its DDR business by years' end

Samsung plans to launch mass production of the 80nm process, 2Gb DDR2 SDRAM
in the second half of 2005. The 2Gb DDR2 devices meet fine-pitch ball grid array
(FBGA) package specifications for DDR2. Even without modifications, the devices
can directly drive module density levels of Gigabyte (GB) scale; 2GB, 4GB and 8GB.

SAMSUNG Introduces 667MHz Mobile CPU for 3G Mobile Handheld Devices

SEOUL, Korea - September 20, 2004 : Samsung Electronics Co., Ltd.,
the leader in advanced semiconductor technology, today announced mobile CPU
with speeds of 667MHz. This mobile CPU is expected to enable diverse multimedia
content in 3G mobile handheld devices such as smart phones and PDAs.

By introducing a structured custom design methodology at the integrated circuit
design and evaluation process levels, Samsung was able to increase the speed of
its mobile CPU. To further support seamless real time video images and high-density
multimedia services, the mobile CPU carries up to 64Kilo Bytes of cache memory.

The new technology includes all the computing characteristics of current mobile CPUs
with an embedded vector floating point co-processor enabling simultaneously computing
of irregular decimal points along with fixed numbers. Design engineers implementing
this technology will see enhanced graphics, 3D gaming and digital audio features.

Key Technology Features

- Core: ARM1020E

- Core Clock: 667MHz @ 1.35V

- No. of Pipelines: 6

- Structured custom methodology for Multimedia

- Low Power : 0.8 mW MHz

SAMSUNG Addresses the Dynamic IT Era with Total Semiconductor Solutions

SEOUL, Korea - September 20, 2004 : Samsung Electronics Co., Ltd.,
the leader in advanced semiconductor technology, today announced its new technology
achievements and overall business strategy at a press conference held at the Shilla Hotel
in Seoul, Korea.

The new technology announcements demonstrate Samsung's potential and capability to
support high performance environments. Furthermore, based on Samsung's experience
in the semiconductor memory market the company approaches strategic markets
in system LSI to provide the mobile and digital consumer arena with total semiconductor solutions.

President of the Semiconductor business, Dr. Chang Gyu Hwang restated that,
“Mobile and digital consumer applications are the new driving forces
of the IT era. Through synergies created between the memory and system LSI divisions,
Samsung will support the new trends with total semiconductor solutions.”.

Dr. Hwang shared views on the future IT era and pivotal technology trend in a keynote
address at ISSCC annual conference in 2001, emphasizing the change in market
momentum from PC to mobile and digital consumer applications and proposing
a more dynamic growth trend in technology: a double density growth in every 12 months.

Samsung's technology achievements, announced today, reinforce the company's
total solution strategy:

- Finest geometry 60 nanometer (nm) 8gigabit (Gb) NAND flash memory

- Highest density 2Gb DDR2 SDRAM

- Fastest speed 667MHz mobile CPU core

The company adds new technology concepts such as MCP, SiP and fusion memory,
merging individual features into a single package or silicon, to its well positioned
memory products and stresses the importance of leveraging strategic businesses --
CMOS image sensors, optical player SOCs, smart card ICs and mobile
application processors?in the system LSI division to further diversify and
differentiate Samsung's competitive market position today.

About Samsung Electronics

Samsung Electronics Co. Ltd. is a global leader in semiconductor, telecommunication,
digital media and digital convergence technologies with 2003 parent company sales of
US$36.4 billion and net income of US$5.0 billion. Employing approximately 88,000 people
in 89 offices in 46 countries, the company consists of six main business units:
Corporate Technology Operations, Digital Appliance Business, Digital Media Business,
LCD Business, Semiconductor Business and Telecommunication Network Business. Recognized as one of the fastest growing global brands, Samsung Electronics is
the world's largest producer of color monitors, color TVs, memory chips,
TFT-LCDs and VCRs. For more information, visit .

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