January 03, 2007 in Computing News

SAMSUNG Samples First 50-nanometer 16Gb NAND Flash for Solid State Disk and Other High-density Applications


Seoul , Korea – January 3, 2007 : Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, announced that it is now sampling its 16-gigabit (Gb) NAND flash memory with customers – the first NAND flash using 50 nanometer (nm) process technology.
The first samples of this high density NAND flash memory have a multi-level cell (MLC) design with a 4Kbyte (KB) page size to enhance both its read and write features. The new 4KB page function improves the conventional 2KB paging system for MLC NAND flash to double the read speed, while increasing write performance 150%.
By nearly doubling the overall performance of Samsung's MLC NAND, mobile consumers will enjoy faster data transfer speeds when storing or reading large data files whether they're using an external memory card, or a handset with a built-in flash solution such as Samsung's moviNAND TM.
Early market introduction of 16Gb and higher density NAND flash memories is expected to accelerate the adoption of non-volatile memory applications such as flash-based solid state disks.
Samsung plans to begin mass producing its 16Gb NAND flash memory in the first quarter of 2007.


About Samsung Electronics

Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2005 parent company sales of US$56.7 billion and net income of US$7.5 billion. Employing approximately 128,000 people in over 120 offices in 57 countries, the company consists of five main business units: Digital Appliance Business, Digital Media Business, LCD Business, Semiconductor Business and Telecommunication Network Business. Recognized as one of the fastest growing global brands, Samsung Electronics is a leading producer of digital TVs, memory chips, mobile phones, and TFT-LCDs. For more information, please visit www.samsung.com



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