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March 09, 2001 in Social Responsibility News

SAMSUNG Electronics Goes After Market for NAND Flash Memory Chips in Next-generation Handsets

SEOUL, Korea - March 8, 2001 - Samsung Electronics has unveiled multi-chip package (MCP) sample that stacks a 64Mb NAND flash memory and a low power-consuming, 32-megabit Uni-transistor (Ut) RAM and has started shipping samples to mobile handset manufacturers.

The NAND flash memory and UtRAM MCP device is a low-cost alternative for the conventional NOR flash memory and SRAM MCP chips. Currently, mobile handsets are shipped with MCP devices that contained a 32Mb flash memory and 8Mb SRAM chip. Further capacity increases are made by installing additional 16Mb flash and 4Mb SRAM MCPs. However, Samsung`s new device can accommodate the requirements for greater memory capacity without the need for additional MCP devices, conserving the space needed for this estate-critical application.

From an application standpoint, NAND flash stores both code and data and the highly efficient UtRAM executes the code functions. The 32Mb UtRAM is sufficient to accommodate ever-increasing application software such as Java and web-browser required by 2.5 generation and 3 generation mobile phones. Application programs may be called on demand from the NAND flash to UtRAM for the most efficient use of RAM. End user data such as address book, e-mail, downloaded contents from the Internet, and internal data like various on-screen images can be executed directly from the NAND flash.

Samsung`s new MCP operates on 2.7 to 3.3-Volt Vcc and the device has a surface area of 8mm by 13mm and is 1.2mm thick. It comes in a 69-pin tape ball grid array (TBGA) package and the NAND flash shares I/O`s and other control pins with the UtRAM, minimizing the number of pins. The pin-out accommodates future memory expansion of NAND flash memory to 512Mb and UtRAM up to 64Mb. Samsung Electronics` UtRAM is completely compatible with conventional SRAMs, so system interface is possible without having to make any special design changes.
Mass production is scheduled for the third quarter of 2001. Samsung also plans to come out with an industry first NAND flash memory operating at 1.8V Vcc in the second half of 2001.

Samsung has also developed a 128Mb Chip Scale Package (CSP) NAND flash memory that measures 9mm wide, 13mm long and 1.0mm thick and uses a 48 pin TBGA package. The company plans to complete development of a 256Mb NAND flash CSP device in the same footprint in the second half of this year.

The NAND CSP device is designed to increase the flash memory capacity of high-end mobile phones and PDAs. While PDAs store end-user data in volatile DRAM that requires sufficient battery back-up for retention and therefore causes instability, NAND flash provides solid non-volatile storage and is a more reliable and efficient solution.

Samsung Electronics anticipates its sales in the data storage market alone will reach US$800 million this year. Next year, the company aims to be among the world`s top five flash memory makers. About Samsung Electronics
Samsung Electronics Co., Ltd., with 2000 sales revenue of US$30 billion is a world leader in the electronics industry. The Korea-based concern has operations in about 50 countries with 54,000 employees worldwide. The company consists of three main business units: Digital Media, Semiconductors and Information & Communications Businesses. For more information, please visit our website, http://samsungelectronics.com

Multi-Chip Package MEMORY
64M Bit (8Mx8) Nand Flash Memory / 32M Bit (2Mx16) UtRAM

· Power Supply voltage : 2.7V to 3.3 V
· Organization
- Flash : (8M + 256K)bit x 8bit
- UtRAM : 2M x 16 bit · Access Time
- Flash : Random access : 10us(Max.), Serial read : 50ns(Min.)
- UtRAM : 70 ns · Power Consumption (typical value)
- Flash Read Current : 10 mA(@20MHz) Program/Erase Current : 10 mA Standby Current : 10 mA
- UtRAM Operating Current : 20 mA Standby Current : 100 mA
· Flash Automatic Program and Erase Page Program : (512 + 16)Byte Block Erase : (8K + 256)Byte
· Flash Fast Write Cycle Time Program time : 300us(Typ.) Block Erase Time : 2ms(Typ.)
· Flash Endurance : 100,000 Program/Erase Cycles Minimum
· Flash Data Retention : 10 years
· Operating Temperature :
-25°C ~ 70°C
· Package : 69
- ball TBGA Type
- 8 x 13mm, 0.8 mm pitch

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