Foundry Overview

Providing cutting-edge technology since 2017 in Austin

Foundry
Samsung started its foundry business in 2005 to provide cutting-edge technologies to a broader market. In 2017, Samsung Foundry found
its home away from home in Austin. Through several successful collaborations with foundry customers and a continuous drive to develop
the most cutting-edge technologies, Samsung Austin Semiconductor has become a major player in the foundry market. Samsung Austin Semiconductor
primarily focuses on the production of 14nm and 28/32nm technologies.

Trailblazer in Cutting-Edge Technology Our innovative 3D-structure FinFet technology is one of the industry’s most important milestones

A New Paradigm for All The Best Advanced Technologies

Samsung Foundry’s most advanced process technology enables its customers to obtain a higher performance
without having to increase the chip size or maintain the same performance with a smaller chip.

Samsung Foundry has taken a revolutionary step by implementing
the innovative 3D-structure FinFET technology. 3D FinFET is the most important technology milestone in the foundry industry in the last 10 years of transition into 14nm process for the superior performance, power and scaling benefits.

With the first 14nm class FinFET offering for foundry industry, Samsung Foundry has led technology innovation. Beyond 14nm technology, Samsung Foundry continues technology innovation for next generation of development.

Continuous Technology Innovation without Borders

Although innovation without borders is the trend of today’s technological advances, tox scaling limit has been imposed on the process evolution
in the semiconductor industry. Since 130nm to 28nm, continuous scaling-down has only been possible through material innovations
such as using copper filler, low-k, stress-technology, ULK, and HKMG. Subsequently, planar transistors on Bulk-Si hit the gate length
scaling limit, however Samsung Foundry found innovative solutions in the structure of transistors with FDSOI and ‘3D FinFET’.

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