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Green Memory in the News

Samsung builds enterprise 3-bit NAND SSD

Apr. 28. 2014
Samsung builds enterprise 3-bit NAND SSD Samsung Electronics, Co., Ltd., said today that it has begun mass producing the industry's first high-performance, three-bit-NAND-based SSD for servers and data centers. Installations of the 3-bit MLC (multi-level-cell) NAND SSDs, initially in large-scale data centers, are expected to begin later this quarter.

The new PM853T SSD, available in 240GB, 480GB and 960GB capacities, claims high levels of random IOPS, performance and quality of service (QoS). The new drive promises a sequential read speed of 530 megabytes per second (MB/s), while writing sequentially at 420MB/s. It also will read data randomly at 90,000 IOPS and handle sustained random writes at 14,000 IOPS, through a SATA 6Gb/sec interface. Samsung expects the adoption of 3-bit SSDs in data centers to replace the 2-bit SSD market.

The big advantage of 3-bit MLC is a lower cost per bit. Samsung says the new drives deliver a 30 percent increase in manufacturing efficiency compared to SSDs that use 2-bit NAND flash components.

Samsung's first 3-bit NAND-based 840 EVO SSD, introduced in 2012, has been successful in ultra-slim notebooks and PCs. They hope to achieve a strong position in high-efficiency SSDs in large data centers.


Source: ZDNet News