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An optimized memory for enterprise-level workloads

Meet diverse enterprise workload demands with higher bandwidth and reduced power consumption

Accelerated adoption of cloud computing, virtualization and high-performance computing (HPC) technologies has made higher-performing, higher-density memory a key factor for server operation. Highly virtualized environments enable companies to run numerous applications on a single server instead of multiple servers. A single server with more virtual machines (VMs) requires not only a higher processor speed, but also higher density in memory.

Requirements for memory become more diverse to support a wide range of enterprise server applications from less critical workloads to mission-critical workloads. Enterprise-level workloads, such as database or transaction processing run on high-end servers, need a large capacity of in-memory systems and higher reliability. Mid-range servers used for virtualization or consolidation require high bandwidth and scalability. Small form factor, less power and low cost are essential requirements for workloads on low-end servers used as web, collaboration and infrastructure systems.

Rising energy costs and the need to provide greater environmental sustainability are also placing demands on chipmakers and server vendors. A server running a virtualized environment can achieve a higher utilization which, in turn, increases the total power consumption of server. As a result, CPU and server companies are focusing intently on the development of next-generation green IT systems.

The memory that supports next-generation, green IT systems should meet the diverse demands of enterprise workloads with higher performance, increased density, improved reliability and low power consumption.

Provide an optimized solution for enterprise applications

Samsung DDR4 is an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements than previously available memory products.

The Samsung portfolio of DDR4-based modules using 20 nm-class process technology includes registered dual inline memory modules (RDIMMs) and load-reduced DIMMs (LRDIMMs). These memory modules are available with initial speeds up to 2400 Mbps, increasing to the Joint Electron Devices Engineering Council (JEDEC)-defined 3200 Mbps. The portfolio includes the following modules:

  • 8 GB DDR4 RDIMMs
  • 16 GB DDR4 RDIMMs
  • 32 GB DDR4 RDIMMs and LRDIMMs
  • 64 GB DDR4 LRDIMMs
  • 128 GB DDR4 LRDIMMs

Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership (TCO). Samsung DDR4’s enhanced reliability, availability and serviceability (RAS) features provide enhanced reliability and improved signal integrity (S/I).

High speed and low voltage of DDR4 SDRAM

Lower power memory consumption with higher capacity and performance

DDR4 higher performance compared with DDR3L and DDR2 Increase performance for higher bandwidth

Samsung DDR4 delivers higher performance at a higher speed than DDR2 and DDR3. DDR4 can achieve more than 2 Gbps per pin beyond 30 Gbps bandwidth. Compared to DDR3L (low power DDR3), Samsung DDR4 shows overall performance improvement in every DIMM and approximately 30 percent better performance at 1 DIMM per channel.

DDR4 provides an optimized server solution for high capacity and performance compared to DDR3L. Reduce power usage for greener, lower-cost computing

A major decrease in voltage and the improved input/output (I/O) power efficiency of DDR4 synchronous dynamic RAM (SDRAM) translates into significant cost savings. According to Samsung internal testing, DDR4 operates at 1.2 V, a voltage that is 11 percent lower than the 1.35 V consumed by DDR3L. DDR4 consumes 37 percent less power than DDR3L when running an identical process at the same speed. DDR4 adopts a Pseudo Open Drain (POD) interface to reduce I/O power consumption and increase power savings by 50 percent compared to DDR3L under 4 Gb-based 16 GB 2 DIMMs per channel (DPC) conditions.

Reduced operating voltage requirements of DDR4 compared to DDR3L Reduced normalized power consumption requirements of DDR4 compared to DDR3L

Samsung DDR4 SDRAM

Manage a range of enterprise workloads with greater reliability, doubled bandwidth and reduced power usage

Designed with advanced system circuit architecture, Samsung DDR4 supports a wide range of server memory needs by delivering higher performance and reduced power usage with increased reliability. With advanced features of Samsung DDR4, companies can achieve greater performance at a lower TCO.

DDR3 and DDR4 specifications and features comparison
DDR3 and DDR4 specifications and features comparison
Feature DDR3 DDR4
Component density, speed 512 Mb ~ 8 Gb, 1.6 ~ 2.1 Gbps 2 Gb - 16 Gb, 1.6 - 3.2 Gbps
Module density 1, 2, 4, 8, 16, 32 and 64 GB 8, 16, 32, 64 and 128 GB
Interface Voltage (VDD, VDDQ, VPP) 1.5 V,1.5 V, NA (1.35 V, 1.35 V, NA) 1.2 V, 1.2 V, 2.5 V
Vref External Vref (VDD, 2) Internal Vref (need training)
Data I/O Center Tab Termination (CTT) (34 ohm) POD (34 ohm)
CMD, ADDR I/O CTT CTT
Strobe Bi-dir, diff Bi-dir, diff
Core architecture Number of banks 8 Banks 16 Banks (4-bank group)
Page size (X4, 8, 16) 1 KB,1 KB, 2 KB 512 B, 1 KB, 2 KB
Number of prefetch 8 bits 8 bits
Added functions RESET, ZQ, Dynamic ODT RESET, ZQ, Dynamic ODT, CRC,
Data Bus Inversion (DBI), Multi preamble
Physical Package type, balls (X4, 8, X16) 78, 96 BGA 78, 96 BGA
DIMM type R, LR, U, SoDIMM R, LR, ECC U/SoDIMM
DIMM pins 240 (R, LR, U), 204 (So) 288 (R,LR, ECC U), 260 (ECC So)
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First in the Market with Advanced DDR3

Double Data Rate Three, Synchronous DRAM, or DDR3 is the new generation of high performance, ultra-low-power memory interface technology used in high performance servers, desktops and notebooks. As the number one supplier in memory, Samsung continues to lead the industry with cutting-edge SDRAM products from the first DDR in 1997, DDR2 in 2001 and DDR3 in 2005. Samsung's high performance main memory solutions are based on JEDEC standards and leverage the company's leadership in advanced research and development of semiconductor process technology.

Samsung's DDR3 brings new levels of performance to notebooks, desktops and servers and pushes the envelope in key areas like power consumption, speed and bandwidth. Our recent 30nm class, 1.35V, 2Gb DDR3 is the world's first ultra-low-power memory technology, with more than a 76% power savings over traditional DDR2 at 2x the bandwidth. When you're ready to make a move to DDR3 or are considering upgrading your systems, we're here to provide the best optimal solution for enhancing your competitive edge.

Double Data Rate SDRAM MigrationDouble data rate sdram migration

Key Features

DDR3 supports data rates of 800 to 1600Mbps, with clock frequencies of 400 to 800 MHz and voltage ranges from 1.5V down to 1.35V. Samsung's advanced process technologies provide memory densities ranging from 1Gb to 4Gb, which help build a wide range of modules ranging from 1GB up to 32GB. In addition, our memory products are lead free and halogen free, attesting to our continuous support of a greener environment.

Major Specification of DDR3
Major Specification of DDR3
Data Rate 800-1866 Mbps # of Banks 1Gb/2Gb/4Gb/8Gb : 8Banks
System Assumption 2 slots(loads) Reset Yes
Vdd/Vddq 1.5V±0.075V, 1.35V(1.28V~1.45V) ODT Yes
Interface 78 BGA for x4/x8, 96 BGA for x16 Driver Calibration Self calibration with ZQ pin
Source Sync Bi-directional DQS (differential default) Module Type R-DIMM, VLP R-DIMM, U-DIMM, SoDIMM
Burst Length BC4, BL8 (8bits prefetch) Density 1/2/4/8/16GB/32GB

By Major Application

20nm 4Gb DDR3 is beneficial for all major EDP applications.

20nm 4Gb DDR3 IS Beneficial for all major EDP applications
Application Features 50nm 1Gb DDR3 40nm 1Gb DDR3 30nm 2Gb DDR3 20nm 4Gb DDR3
Server Power usage
of 8GB module
9.2W (1.5V) 5.4W (1.35V) 4.0W (1.35V) 3.2W (1.35V)
Max Data Rate w/8GB 800Mbps with 2DPC
(16GB)
800Mbps with 2DPC
(16GB)
1333Mbps with 1DPC
(8GB)
1066Mbps with 2DPC
(16GB)
800Mbps with 3DPC
(24GB)
1600Mbps with 1DPC
(8GB)
1333Mbps with 2DPC
(16GB)
800Mbps with 3DPC
(24GB)
Max density
per Channel
16GB with 2DPC
(Two 8GB modules)
16GB with 2DPC
(Two 8GB modules)
32GB with 2DPC
(Two 16GB modules)
96GB with 3DPC
(Three 32GB modules)
Notebook Power usage
of 4GB module
2.47W (1.5V) 1.82W (1.35V) 1.23W (1.35V) 0.97W (1.35V)
Max density
per Channel
4GB (2Rx8) 4GB (2Rx8) 8GB (2Rx8) 16GB (2Rx8)
Desktop Max Speed -1600Mbps -1600Mbps -1600Mbps -1600Mbps
Max density
per Cahnnel
4GB with 2DPC
(Two 2GB modules)
4GB with 2DPC
(Two 2GB modules)
8GB with 2DPC
(Two 4GB modules)
16GB with 2DPC
(Two 8GB modules)
SEC internal data (Typical Value)
DPC DIMM per Channel

Samsung DDR2 vs. Samsung DDR3

Samsung DDR2 VS. Samsung DDR3
Features DDR2 DDR3 Remark
Pin-out and Package 60ball(x4/x8), 84ball(x16) FBGA 78ball(x4/x8), 96ball(x16) FBGA
Voltage 1.8V 1.5V/1.35V Reduces memory system power demand
Density 512Mb~2Gb 1Gb~4Gb Mono component
Internal banks 4(512Mb), 8(1Gb/2Gb) 8(1Gb/2Gb/4Gb)
Prefetch 4bit 8bit
tCK (DLL enabled) 125MHz~400MHz 300MHz~933MHz Supports higher data rates
Burst length BL4, BL8 BC4, BL8 BC4 provides relief from some
BL8 requirements
Burst Type Fixed Fixed OTF (On-the-fly) OTF allows switching between
BC4 and BL8
Speed per I/O 400, 533, 667, 800 Mbps 800, 1066, 1333, 1866 Mbps Migration to higer speed
Additive latency AL options(0, 1, 2, 3, 4) AL options(0, CL-1, CL-2)
Read latency AL+CL CL=3, 4, 5, 6 AL+CL CL=6, 7, 8, 9, 10
Write latency RL-1 AL+CWL CWL=5, 6, 7, 8
Data strobes Sigle-ended Differential Differential only Reduce data strobe crosstalk
Data bus termination (Rtt) ODT (On die termination) ODT (On die termination)
Rtt value 50, 75, 150 Ohm 20, 30, 40, 60, 120 Ohm Supported for higher data rates
Rtt allowed Read, Write, Standby Write, Standby
Dynamic ODT None 60, 120 Ohm Support 2slots (Write only)
DQ driver impendance 18 Ohm 34 Ohm Optimized for 2slots
Driver/ODT calibration None External register Improves accuracy over voltage
and temperature
Multi-purpose register None Four register Provides specialty readout