Exynos 7 Dual (7270)

PROCESSOR THAT MAKES A WEARABLE
WEARABLE

Samsung Exynos 7 Dual (7270) is a dedicated processor for wearable that presents a new paradigm to the wearable industry. In addition to advanced 14nm FinFET process, integrated LTE modem with various connectivities, and 64-bit dual-core CPU, the Exynos 7 Dual integrates memory and Power management IC all in a small tiny package making it perfect for slim form-factor wearable devices that are powerful and has incredibly long battery life.

SiP-ePoP Package

Breathtaking technologies
in an ultra-mini package.

Powerful processor is useless if it’s too big to fit into size-sensitive wearable devices. To meet such need, Exynos 7 Dual is built with the most innovative packaging technology. The SiP-ePoP1) package includes not only the processor but also memory (DRAM & eMMC) and power management IC in a tiny 10 x 10mm package while reducing the thickness2) by approximately 30%.

1) SiP-ePoP (Sip: System-in-Package, ePoP: embedded Package on Package)
2) Compared to its predecessor.

Learn more about SiP-ePoP package

For longer battery life, in just simple math, one just needs to use a bigger battery. But with only limited space available in a very slim wearable device, this can be done only through reducing the space occupied by various chips. However combining or integrating the main processor and power IC is deemed close to impossible as they generate heat that may cause instability in performance. Furthermore NAND flash memory is highly sensitive to heat making it difficult to package with or stack on components that are high in temperature.

When it all seemed impossible, Samsung innovated new package scheme called SiP-ePoP. Samsung developed ePoP package, integrating NAND flash with mobile processor, using special heat resistant properties in 2015. And with power efficient 14nm FinFET process based mobile processor and wearable dedicated Power management IC, Samsung was able to successfully combine the two using SiP packaging. With SiP-ePoP, Exynos 7 Dual successfully integrates all those components into one package.

14nm FinFET Process

Wear longer with less recharging

With the advanced 14nm FinFET process, the Exynos 7 Dual delivers 20 percent improved power efficiency than its predecessor built on 28nm process, allowing devices to last longer.

Learn more about 14nm FinFET

Samsung’s 14nm process uses FinFET structure, unlike the planar structure used in previous processes. In FinFET structure, gates enclose the protruding drain and source to effectively block current leakage. In a planar structure, gate is attached to the transistor on only one surface, whereas in a FinFET structure, gate can be attached on three sides of channel allowing to better control the current leakage more effectively than planar. Also in planar structure, electrons can move from source to drain through only one surface under the gate, whereas in FinFET structure, electrons can move across three surfaces of fin-shaped 3D structure. Furthermore, shorter gate length of the 14nm process means electrons move a shorter distance of path from source to drain, enabling transistors to switch on/off very quickly. For simplicity, if the channel is a road, more channels mean more number of lanes but at shorter length due to advanced process node. With more paths with shorter length, more electrons can move faster through the channel resulting in enhanced performance.

LTE Modem and Connectivity

Stay connected anywhere at anytime

The integrated Cat.4 LTE modem* enables wearable devices to be always connected as a standalone device while devices can also be tethered to a smartphone via WiFi or Bluetooth. Furthermore, integrated FM radio and GNSS solution enables the device to feature radio and location based services.

* To be supported

Reference Platform

For easier and faster development

Samsung provides a reference platform that features various components including display, NFC, audio codec, diverse sensors and a sensor hub to enable faster time to market. It enables manufacturer to test and optimize the performance and power consumption on various use scenarios with less time and resources.

  • CPU

    CPU

    1.0GHz Dual-core
    (Cortex®-A53)
  • GPU

    GPU

    Mali™-T720
  • Process

    Process

    14nm FinFET Process
  • Display

    Display

    qHD (960x540)
  • LTE Modem

    LTE Modem

    LTE Category 4 non-CA*

    * To be supported

  • Connectivity

    Connectivity

    WiFi, Bluetooth® 4.2,
    FM Radio
  • GNSS

    GNSS

    GPS, GLONASS, BeiDou
  • PMIC

    PMIC

    Integrated in SiP-ePoP
    package
  • Storage

    Storage

    eMMC 5.0, SD Card
  • Memory

    Memory

    LPDDR3
  • Camera

    Camera

    5Mp
  • Video

    Video

    HD(720p@30fps) video with
    HEVC(H.264), VP8 Codec
  • Package

    Package

    SiP-ePoP, 10x10mm

All functionality, features, specifications and other product information provided in this document including, but not limited to, the benefits,
components, performance, availability, and capabilities of the product are subject to change without notice or obligation.