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  • Breathe cutting-edge technology into your PC.

    PC DRAMBreathe cutting-edge technology into your PC.

    The fast and energy-efficient Samsung PC DRAM will propel your PC performance ahead of the competition.

Boost your PC’s performance to new levels.

You need the right expert for the right PC memory solution.
Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.
Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.
Improved bandwidth for high-end applications.
Improved bandwidth for high-end applications.
With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.

Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.
Complete multi-tasking with less energy.
Complete multi-tasking with less energy.
Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.

Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.

Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.
Double your capacity with the world’s 1st 8Gb chips.
Double your capacity with the world’s 1st 8Gb chips.
The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.

Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.

Catalogue

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Partnumber Production Status Density Organization Voltage(V) Speed Power Bank/ Interface Package
K4A4G045WE Mass Production 444444 1Gx4 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A4G085WE Mass Production 444444 512Mx8 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A4G165WE Mass Production 444444 256Mx16 1.2V PB, RC, TD C 8B/POD 96FBGA
K4A8G045WB Mass Production 444448 2Gx4 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G045WC Mass Production 444448 2Gx4 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G085WB Mass Production 444448 1Gx8 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G085WC Mass Production 444448 1Gx8 1.2V PB, RC, TD C 16B/POD 78FBGA
K4A8G165WB Mass Production 444448 512Mx16 1.2V PB, RC, TD C 8B/POD 96FBGA
K4A8G165WC Mass Production 444448 512Mx16 1.2V PB, RC, TD C 8B/POD 96FBGA

DDR4

  • Temperature & Power
    • C: Commercial Temp.(0℃~85℃) & Normal Power
    • I: Industrial Temp.(-40℃~95℃) & Normal Power
  • Speed
    • PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15)
    • RC: DDR4-2400 (1200MHz @ CL=17, tRCD=17, tRP=17)
    • TD: DDR4-2666 (1333MHz @ CL=19, tRCD=19, tRP=19)

DDR3

  • Temperature & Power
    • C: Commercial Temp.(0℃~85℃) & Normal Power(1.5V)
    • Y: Commercial Temp.(0℃~85℃) & Low Voltage(1.35V)
    • M: Industrial Temp.(-40℃~95℃) & Low Voltage(1.35V)
  • Speed
    • F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6)
    • F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
    • H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)
    • K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)
    • MA: DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13)
    • NB: DDR3-2133 (1066MHz @ CL=14, tRCD=14, tRP=14)

DDR2

  • Temperature & Power
    • I: Industrial Temp.(-40℃~95℃) & Normal Power
  • Speed
    • F8: DDR2-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
    • E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)
    • F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6)
    • E6: DDR2-667 (667MHz @ CL=5, tRCD=5, tRP=5)

Related Resources

  • Brochure (2)
    • Next generation DDR4 memory optimized for supercomputing
      Samsung 20nm DDR4 SDRAM with TSV is an optimized memory solution for high performance computing.
      01 Jun, 2015
    • Samsung DDR4 SDRAM for enterprises
      Samsung DDR4 DRAM memory solution has been optimized for a wide range of enterprise-level workloads.
      10 Nov, 2015
  • Device Operation & Timing Diagram (1)
    • DDR4 Device Operation & Timing Diagram
      04 Apr, 2016
  • Others (2)
    • Memory Module Handling Guide
      Memory Handling Guide For Module Type
      20 Aug, 2015
    • PackingInformation
      Basic Packing Information For Products
      20 Aug, 2015
  • Product Guide (2)
  • Solution Brief (1)
    • HP Desktops Samsung Memory
      HP desktops optimized with Samsung‘s latest SSDs and low-power DDR4 technology
      01 Nov, 2015
  • Solution Brief by Application (2)
    • Solution Brief for Desktop PC
      Let Samsung’s leading technology help you deliver ultimate performance to PCs on the table.
      25 Mar, 2016
    • Solution Brief for Notebook PC
      Unleash a notebook PC with enormous computing power supported by state-of-the-art power efficiency.
      25 Mar, 2016

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Let Samsung’s leading technology help you deliver ultimate performance to PCs on the table.