Driving the Growth
of New Technologies

Samsung HBM Flarebolt revolutionizes memory by empowering high bandwidth,
swift data transfer, advanced graphics and next-gen networking in small form factors.

Moving to the Next Level of HPC

- 8x faster than GDDR5
- 1TB/s system memory bandwidth

Samsung’s HBM Flarebolt delivers the fastest performance, increased 1,024 I/O and 1TB/s of system memory bandwidth with 256 GB/s via 8 channels. The HBM Flarebolt’s record-setting data transmission meets the rising market demands of the new IT industry, such as AI and Machine Learning.

Samsung Semiconductor DRAM HBM2, Fastest performance, 1,024 I/O Bandwidth, 1 TB/S System Memory

Proven Reliability with Lower Power

- 20% improved power efficiency

With 20% less power consumption compared to 1.5V of GDDR5, Samsung HBM Flarebolt’s 1.35V operating voltage makes control of power consumption significantly more effective.

Samsung Semiconductor DRAM HBM Flarebolt, 20% Lower Power Consumption

Highly Condensed Package

- Design flexibility with 8GB per cube
- 94% less PCB space used

The integral design, combining stacked memory and CPU/GPU, accomplishes massive space saving over GDDR5. The Samsung HBM Flarebolt occupies 94% less space compared to GDDR5 and presents the perfect solution for the sleekest of small form factors.

Samsung Semiconductor DRAM HBM2, 94% Less PCB Space Used

Product Selector

Product Name, Production Status, Density, Organization, Voltage, Power, Bank & Package
COMPARISON

Please check the comparison item if you want to data comparison.

Related Solutions

All product specifications reflect internal test results and are subject to variations by user’s system configuration. All product images shown are for illustration purposes only and may not be an exact representation of the product. Samsung reserves the right to change product images and specifications at any time without notice.