FinFET Process

Radical innovation to push
the limit for greater speed
and efficiency
FinFET process technology enables mobile processors to overcome the limit of the conventional transistor structure to achieve enhanced performance and better power efficiency. The Samsung Exynos processor built on the advanced FinFET process helps smartphone to be faster and longer lasting than ever before.


Scaling the limitation of
planar transistor
Samsung has continuously found a new breakthrough ways to perfect the balance of speed and efficiency. Samsung Exynos processor was the first in the industry to feature the octa-core CPU, big.LITTLE HMP processing, and 64-bit computing in mobile. While the industry struggles to go forward, Samsung redesigned the CPU from scratch to provide a differentiated value. The custom-designed CPU is the innovative outcome of Samsung’s continuous work done to improve mobile processor.
2D planar structure
2D planar structure


Radical innovation from
2D to 3D fin shaped structure
To shrink the process node to under 20nm, chip industry has had to face a big challenge: how to control the “On” and ”Off” status more effectively at minimum current leakage. A breakthrough solution to this challenge was the FinFET technology. Unlike the conventional 2D Planar structure, where the gate sits flat over the source and drain, FinFET is a 3D structure that wraps the gate with gate oxide around the fin-shaped source and drain.
2D planar structure and 3D FinFET structure


Better power efficiency for
longer battery life
In FinFET structure, gates with oxide enclose the protruding drain and source from three sides to effectively block current leakage, whereas in a planar structure, gate is stuck to the transistor on only one surface. With improvements in controllability, less amount of voltage is needed to switch status from “Off” to “On” resulting in a better power efficiency than a planar.
Samsung Exynos FinFET Process, Better power efficiency, Power consumption graph


Enhanced performance for
breathtaking speed
In planar structure, electrons move from source to drain through only one surface under the gate, whereas in FinFET structure, electrons move across three surfaces of a fin-shaped 3D structure. Simply put, at a given time more amount of electrons are transmitted allowing FinFET to deliver higher performance than Planar structure. In addition, shorter gate length of the advanced process means shorter distance is required for electrons to travel, enabling transistors to switch on and off very quickly resulting in enhanced performance.
PSamsung Exynos FinFET Process, Enhanced performance, Performance graph


Exynos has been leading
the FinFET innovation
In 2018, Samsung proudly announced the Exynos 9810, a mobile processor built on the 2nd generation 10nm FinFET process. However, it’s not the first processor that Samsung utilized FinFET technology. In January of 2015, Samsung began mass production of Exynos 7 Octa (7420), the industry's first mobile processor using the 14nm FinFET process technology. The Samsung Exynos processor will continue to be built on the industry’s most advanced process technology to create infinite possibilities on mobile life.
Samsung Exynos FinFET Process History

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