45/65nm

Supporting a wider spectrum of process technology

Samsung Austin Semiconductor is proud to be a part of the Samsung Foundry business. We know that our advanced technologies help power mobile phones, tablets and other electronic devices for customers around the world. Although our production is primarily focused on 14 nm and 28/32nm, additional process technologies are also available as below.

45nm Process Technology

The 45nm process is characterized by several key technologies, which offers 193nm immersion lithography patterning of critical design rules with defectivity rates comparable to dry litho systems. Also, suggests ultra Low-K dielectric materials for metal line insulation resulting in RC delay reduction vs. low-k. The 45nm technology doubles gate density of the 65nm process with the significant low power and low manufacturing cost that is 50% linear shrink in addition to 15% speed enhancements and 35% active power reduction. Numerous products from top fabless players have been in mass production since 2008 enabled by 45nm low power process technology and its design ecosystem.

Key Features of 45nm
- Twin- or triple-well CMOS technology on p-substrate.
- Shallow trench isolation.
- Low-resistance nickel-salicided polysilicon and diffusion.
- Four to ten copper metal levels, including up to six 1x, four relaxed-pitch 2x,
   and two relaxed- pitch 4x metal levels, one 6x metal level.
- Wire-bond pads or controlled collapse chip connections (C4s).
- Optional electrically programmable fuses.
Device offerings
65nm Process Technology

65nm Process is a collaborative Technology Development Initiative between Samsung Foundry and ISDA alliance partners.
65nm Low Power technology covers a broad range of applications from the handheld devices to consumer electronics with the fully
Si-proven IP/Libraries which provides a variety of transistor, oxide and back-end stack options for customer's products.

Key Features of 65nm
- Twin- or triple-well CMOS technology on p-substrate.
- Shallow trench isolation.
- Low-resistance nickel-salicided polysilicon and diffusion.
- Wire-bond pads or controlled collapse chip connections (C4s).
- Optional electrically programmable fuses.
Device offerings
PROD
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