3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Incredible Read/Write Speeds
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 1.9x faster performance than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.
Enhanced RAPID mode
Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
Guaranteed Endurance and reliability
The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5 year warranty. With enhanced long-term reliability, the 850 EVO assures longterm dependable performance of up to 30% longer than the previous generation 840 EVO.
** Measured with Sustained Performance 12hr Random Write Test
*** Highest among 3-Bit MLC-class SSD drives
Improved Energy Efficiency
The 850 EVO delivers significantly longer battery life on your notebook* with a controller designed and optimized for 3D V-NAND that supports Device Sleep for Windows at a highly efficient 2mW. The 850 EVO supports 25% better power efficiency than the 840 EVO during write operations thanks to ultra-efficient 3D V-NAND only consuming half the energy than that of traditional Planar 2D NAND.
Secure Data Through Advanced AES 256 Encryption
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256-bit hardware encryption secures data without any performance degradation and complies with TCG Opal 2.0. Easily integrate into Windows with Microsoft e-drive IEEE1667 to keep your data protected at all times.
Dynamic Thermal Guard Protection
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions to ensure the integrity of your data. The Thermal Guard automatically throttles temperatures down when temperatures rise above optimal critical threshold. This protects your data while maintaining responsiveness to help ensure your computer is always safe from overheating.
One-stop Install Navigator Software
In three simple steps, the Samsung One-stop Install Navigator software easily allows you to migrate all the data and applications from your existing drive to the 850 EVO. The included Samsung Magician software also allows you to setup, optimize, and manage your system for peak SSD performance.
End-to-end Integration Solution
Samsung is the only brand to design and manufacture all its components inhouse allowing complete optimized integration. The result – the rock-solid EVO 850, with enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the MEX/MGX controller – all from the #1 memory manufacturer in the world.
Features and specifications are subject to change without prior notification
Solid State Drive
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
120 GB* Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Sequential Read Speed
Up to 540 MB/s Sequential Read: * Performance may vary based on system hardware & configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write: * Performance may vary based on system hardware & configuration
Random Read Speed
Random Read (4KB, QD32):Up to 94,000 IOPS Random Read * Performance may vary based on system hardware & configurationRandom Read (4KB, QD1):Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32):Up to 88,000 IOPS Random Write * Performance may vary based on system hardware & configurationRandom Write (4KB, QD1):Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Samsung 32 layer 3D V-NANDSamsung 256 MB Low Power DDR3 SDRAM
Samsung MGX Controller
AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
Power Consumption (W)
50 MW * Actual power consumption may vary depending on system hardware & configuration*Average: 2.1 W *Maximum: 2.4 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
5V ± 5% Allowable voltage
2 Million Hours Reliability (MTBF)
32ºF - 158ºF
2.5" Form Factor
Dimensions (W x D x H)
3.94" x 2.75" x 0.27"
5 Years Limited Warranty or 75TBW Limited Warranty
Features and specifications are subject to change without prior notification.