540MB/s Seq. Read
520MB/s Seq. Write
Unlock Your Computer's Potential
Samsung's 850 EVO series SSD is the industry's #1 best-selling* SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks, the 850 EVO comes in a wide range of capacities and form factors.*
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode to further boost performance for up to 2x faster** data processing speeds by utilizing unused PC memory as cache storage.
Guaranteed Endurance and Reliability
The Samsung 850 EVO maintains high performance, optimized endurance, AES 256-bit hardware-based encryption***, Dynamic Thermal Guard, and a 5 year limited warranty****.
Multiple Form Factors for Almost Any Need
Samsung has designed the 850 EVO in multiple form factors with compatibility in mind. The 2.5-inch size is designed to fit most desktop PCs and laptops, while the SATA-based M.2 and mSATA are ideal for ultra-slim mobile computing.
Features and specifications are subject to change without prior notification
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
1,000 GB **Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Sequential Read Speed
Up to 540 MB/s Sequential Read **Performance may vary based on system hardware & configuration
Sequential Write Speed
Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32): Up to 89,000 IOPS Random Write * *Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Samsung 48L 3D V-NANDSamsung 1 GB LPDDR3
Samsung MGX Controller
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
GC (Garbage Collection)
Auto Garbage Collection Algorithm
World Wide Name supported
Device Sleep Mode Support
Power Consumption (W)
50 mW * Actual power consumption may vary depending on system hardware & configurationAverage: 2.2 Watts *Maximum: 2.7 Watts (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
1.5 million hrs Reliability (MTBF)
32 - 158
1,500G & 0.5ms (Half sine)
Dimensions (W x D x H)
3.16" x 0.87" x 0.09"
5 Years Limited Warranty or 150TBW Limited Warranty
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